Stable implementation of a deterministic multi-subband Boltzmann solver for Silicon Double-Gate nMOSFETs

Abstract

Silicon Double Gate nMOSFETs are simulated using a deterministic Boltzmann solver coupled with a 1D Schrödinger and 2D Poisson Equation. Subthreshold characteristics and high drain bias conditions can be well simulated by the solver stabilized by the H-transformation and the maximum entropy dissipation scheme.