纳米MOS晶体管量化效应模拟的伪谱方法

2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI:10.1109/SISPAD.2010.5604499

A. Paussa, F. Conzatti, D. Breda, R. Vermiglio, D. Esseni

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引用次数: 5

摘要

本文系统地比较了伪谱法(PS)和有限差分法(FD)在求解n型和p型mos晶体管不同几何形状和载流子维数的特征值问题时的数值效率。我们的结果表明，与FD方法相比，PS方法在CPU时间方面具有显着优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Pseudo-spectral method for the modelling of quantization effects in nanoscale MOS transistors

This paper presents a systematic comparison between the numerical efficiency of the pseudo-spectral (PS) and finite difference (FD) methods for the solution of eigenvalue problems related to both n and p-MOS transistors, with different geometries and carrier dimensionalities. Our results indicate remarkable advantages of the PS compared to the FD method in terms of CPU time.

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2010 International Conference on Simulation of Semiconductor Processes and Devices

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