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Analysis of the Chemical Vapor Deposition of silicon by Intracavity Laser Spectroscopy 用腔内激光光谱法分析硅的化学气相沉积
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.wd2
J. O'Brien, G. Atkinson
{"title":"Analysis of the Chemical Vapor Deposition of silicon by Intracavity Laser Spectroscopy","authors":"J. O'Brien, G. Atkinson","doi":"10.1364/lmd.1987.wd2","DOIUrl":"https://doi.org/10.1364/lmd.1987.wd2","url":null,"abstract":"Both the analysis and control of chemical vapor deposition (CVD) processes, are greatly aided by the availability of experimental methods for monitoring the gas phase precursors of the depositing material. The real time, in situ detection of intermediate reaction species is an almost essential element in studies directed at understanding the fundamental chemistry and physics of CVD processes. Such studies also can have a major impact on CVD processing practices.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120862647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Methods for the Study of Explosive Chemistry 爆炸化学研究的光学方法
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.wc4
W. Trott, A. M. Renlund
{"title":"Optical Methods for the Study of Explosive Chemistry","authors":"W. Trott, A. M. Renlund","doi":"10.1364/lmd.1987.wc4","DOIUrl":"https://doi.org/10.1364/lmd.1987.wc4","url":null,"abstract":"An understanding of the reaction zone in a detonating high explosive (HE) requires characterization of both the mechanical response of the material and the chemical reaction mechanisms that control the rate at which the HE is consumed. Moreover, the detailed chemistry is clearly a contributing factor in the shock-initiation of energetic materials. Although a considerable body of empirical knowledge on shock sensitivity and explosive performance is presently available, practically no information exists regarding the important microscopic physical and chemical processes. Much additional insight into these processes is needed for the development of predictive capabilities in the areas of initiation and performance. In this paper, we discuss the application of several optical diagnostic methods for the study of explosive chemistry. We have emphasized techniques which provide good spatial and temporal resolution and are applicable to \"single-shot\" measurements on pressed, polycrystalline samples of widely used HEs. These techniques include electronic fast-framing photography, time-resolved emission spectroscopy, single-pulse Raman scattering and time-resolved infrared spectral photography (TRISP).","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131419991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-Situ Raman Microprobe Analysis of Direct Laser Writing 激光直接书写的原位拉曼微探针分析
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.thb1
I. Herman
{"title":"In-Situ Raman Microprobe Analysis of Direct Laser Writing","authors":"I. Herman","doi":"10.1364/lmd.1987.thb1","DOIUrl":"https://doi.org/10.1364/lmd.1987.thb1","url":null,"abstract":"Raman scattering is a versatile, non-destructive diagnostic of semiconductors and other materials, which can be used either in-situ after processing has occurred or, in many circumstances, in real-time during processing. By proper selection of lasers and optical design, Raman microprobe methods may be used to investigate sample stoichiometry, doping, crystallinity, stress, and temperature with micron or sub-micron lateral and depth resolution. The use of Raman microprobe techniques to analyze microstructures made by direct laser writing and to analyze microstructures heated by localized laser irradiation is described here.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116104186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Characterization of III-V Semiconductors III-V型半导体的光学特性
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.the1
D. C. Reynolds, K. Bajaj
{"title":"Optical Characterization of III-V Semiconductors","authors":"D. C. Reynolds, K. Bajaj","doi":"10.1364/lmd.1987.the1","DOIUrl":"https://doi.org/10.1364/lmd.1987.the1","url":null,"abstract":"During the past several years considerable attention has been focused on artificially structured materials. These materials consist of layered structures of the same or different materials. With the advent of the metal organic chemical vapor deposition (MOCVD) and the molecular beam epitaxy (MBE) growth techniques, atomic layers of one material can be grown on another material with sharp, reproducible interfaces. For layer thicknesses of a few angstroms or less, well defined quasi two-dimensional electronic sub-bands are formed. The confined carriers result in novel electronic and optical properties. The heterostructure system that has received the most extensive investigation is the AlGaAs/GaAs system. The characterization of this system is the focus of the current paper.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126657750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Excimer laser photochemistry of Al-alkyls monitored by dye laser mass spectroscopy 染料激光质谱法监测烷基基准分子激光光化学
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.thd2
Y. Zhang, M. Stuke, R. Larciprete, E. Borsella
{"title":"Excimer laser photochemistry of Al-alkyls monitored by dye laser mass spectroscopy","authors":"Y. Zhang, M. Stuke, R. Larciprete, E. Borsella","doi":"10.1364/lmd.1987.thd2","DOIUrl":"https://doi.org/10.1364/lmd.1987.thd2","url":null,"abstract":"Metal Organic Chemical Vapor Deposition (MOCVD) is a powerful technique for the generation of well-defined layers of metals and semiconductors [1]. Extending MOCVD by the use of lasers to Laser-MOCVD, selective area growth can be obtained ([2] and references therein). Laser induced deposition of structured aluminum films can be achieved using UV lasers and Al-alkyls like triisobutylaluminum (TIBA) as gaseous organometallic precursor [3, 4].","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117010722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Raman Analysis of Inorganic Thin Films* 无机薄膜的拉曼分析*
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.wa3
D. Tallant, K. Higgins, P. Hargis, A. Stewart
{"title":"Raman Analysis of Inorganic Thin Films*","authors":"D. Tallant, K. Higgins, P. Hargis, A. Stewart","doi":"10.1364/lmd.1987.wa3","DOIUrl":"https://doi.org/10.1364/lmd.1987.wa3","url":null,"abstract":"Techniques for the Raman analysis of plasma-deposited submicrometer silicon films on metallic substrates and dielectric films on Raman-active substrates will be described and typical results will be presented.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122083355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Picosecond Time Resolved Emission of Mercury Cadmium Telluride and Related II - VI Semiconductor Crystals 碲化汞镉的皮秒时间分辨发射及相关II - VI半导体晶体
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.the3
J. Hutchinson, T. Dutton, P. Rentzepis, D. Cooper, J. Bajaj, P. Newman
{"title":"Picosecond Time Resolved Emission of Mercury Cadmium Telluride and Related II - VI Semiconductor Crystals","authors":"J. Hutchinson, T. Dutton, P. Rentzepis, D. Cooper, J. Bajaj, P. Newman","doi":"10.1364/lmd.1987.the3","DOIUrl":"https://doi.org/10.1364/lmd.1987.the3","url":null,"abstract":"Picosecond resolved emission of HgCdTe and CdTe crystals by IR-VIS streak camera shows temperature dependent multiexponential decay kinetics and elucidates the mechanisms of exciton trapping and anihilation.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131224911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laser Microprobe Mass Spectrometry and Its Relationship to Other Microanalytical Techniques 激光微探针质谱及其与其他微量分析技术的关系
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.thc1
C. A. Evans
{"title":"Laser Microprobe Mass Spectrometry and Its Relationship to Other Microanalytical Techniques","authors":"C. A. Evans","doi":"10.1364/lmd.1987.thc1","DOIUrl":"https://doi.org/10.1364/lmd.1987.thc1","url":null,"abstract":"There are a variety of techniques employed for the microanalysis of materials. The majority of these techniques employ focused ions or electron beams to probe the materials. In recent years, a technique called Laser Microprobe Mass Spectrometry has been developed to provide a unique and complementary characterization capability. This paper will deal with the basic phenomena involved, instrumentation and illustrations of the technique's utility with a variety of applications.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134529238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laser Diagnostics of Radio Frequency Discharges 射频放电的激光诊断
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.we1
R. Gottscho
{"title":"Laser Diagnostics of Radio Frequency Discharges","authors":"R. Gottscho","doi":"10.1364/lmd.1987.we1","DOIUrl":"https://doi.org/10.1364/lmd.1987.we1","url":null,"abstract":"Recent applications of laser spectroscopy to the study of plasma and plasma-surface processes are reviewed. Using laser-induced fluorescence and optogalvanic spectroscopy, measurements of concentration gradients, reaction probabilities, electric fields, and process end-points have helped to elucidate plasma-chemical mechanisms.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121155379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photothermal Probe-Beam Deflection Measurement of Moisture Adsorption on a Silicon Surface Under Atmospheric Conditions 大气条件下硅表面水分吸附的光热探针束偏转测量
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.tha3
Holger Schroeder, A. Tam
{"title":"Photothermal Probe-Beam Deflection Measurement of Moisture Adsorption on a Silicon Surface Under Atmospheric Conditions","authors":"Holger Schroeder, A. Tam","doi":"10.1364/lmd.1987.tha3","DOIUrl":"https://doi.org/10.1364/lmd.1987.tha3","url":null,"abstract":"Although there is much work done on thermal desorption of molecules on a solid surface /1/, most previous work was performed in vacuum or low-pressure conditions and utilized direct particle detectors (e.g. mass spectrometer). The present work examines photo-thermal desorption from a surface in atmospheric conditions utilizing a probe-beam deflection /2/ technique. This is demonstrated for an important case of adsorbed water on a silicon wafer with normal surface oxide.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114868380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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