Analysis of the Chemical Vapor Deposition of silicon by Intracavity Laser Spectroscopy

Abstract

Both the analysis and control of chemical vapor deposition (CVD) processes, are greatly aided by the availability of experimental methods for monitoring the gas phase precursors of the depositing material. The real time, in situ detection of intermediate reaction species is an almost essential element in studies directed at understanding the fundamental chemistry and physics of CVD processes. Such studies also can have a major impact on CVD processing practices.