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Picosecond Transient Reflectivity and Raman Gain Spectra of GaAs 砷化镓的皮秒瞬态反射率和拉曼增益谱
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.wa2
J. Wessel, S. Beck
{"title":"Picosecond Transient Reflectivity and Raman Gain Spectra of GaAs","authors":"J. Wessel, S. Beck","doi":"10.1364/lmd.1987.wa2","DOIUrl":"https://doi.org/10.1364/lmd.1987.wa2","url":null,"abstract":"Recently Woodall and co-workers1 at IBM reported interesting results from a photowashing procedure applied to (100) GaAs. Unpinned behavior was observed immediately after washing. Photoluminescence yields measured from regions near the surface increased dramatically. The results suggested that the strong surface band bending ordinarily present in GaAs can be essentially eliminated by the photowashing procedure.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129635286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface Second Harmonic Generation Spectroscopy of Oxide Surfaces 氧化表面的二次谐波产生光谱
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.wc1
W. Hetherington, G. Bandu, T. L. Mazely, Z. Ho, W. Wijekoon
{"title":"Surface Second Harmonic Generation Spectroscopy of Oxide Surfaces","authors":"W. Hetherington, G. Bandu, T. L. Mazely, Z. Ho, W. Wijekoon","doi":"10.1364/lmd.1987.wc1","DOIUrl":"https://doi.org/10.1364/lmd.1987.wc1","url":null,"abstract":"Second harmonic generation has been established recently as a specific probe of interfacial species. On dielectric surfaces, it has been used to detect the presence, the electronic states and the average orientation of interfacial species.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130575870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Matched Sample Differential Laser Calorimetry 匹配样品差示激光量热法
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.tha4
M. Bass, R. Swimm, M. Innocenzi
{"title":"Matched Sample Differential Laser Calorimetry","authors":"M. Bass, R. Swimm, M. Innocenzi","doi":"10.1364/lmd.1987.tha4","DOIUrl":"https://doi.org/10.1364/lmd.1987.tha4","url":null,"abstract":"Thermocouple laser calorimetry was developed to allow absolute measurement of very small optical absorptions in materials to be used for high power laser optics. The technique involves sending a beam of light through the sample to be studied and, by means of an attached temperature sensor, measuring its change in temperature due to light energy absorption. The temperature change is measured relative to a reference object which is not exposed to the light. Sensitivities to absorptions as small as 10-5 cm-1 are possible. Photoacoustic detection of the absorbed energy allows relative measurements of absorption and when calibrated against thermocouple measurements yeilds similar absolute sensitivities.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124054542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laser Spectroscopy of Chemical Vapor Deposition 化学气相沉积的激光光谱学
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.wd1
W. Breiland, P. Ho, M. Coltrin
{"title":"Laser Spectroscopy of Chemical Vapor Deposition","authors":"W. Breiland, P. Ho, M. Coltrin","doi":"10.1364/lmd.1987.wd1","DOIUrl":"https://doi.org/10.1364/lmd.1987.wd1","url":null,"abstract":"Chemical vapor deposition (CVD) is an important industrial process used\u0000 to deposit solid films for protective coatings and microelectronic\u0000 applications. The CVD processes used in the fabrication of\u0000 microelectronic devices are becoming more complex, and higher demands\u0000 are being made on the resulting films. A fundamental understanding of\u0000 the chemistry and physics of CVD may help meet future process control\u0000 requirements, and could lead to novel deposition methods.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132195197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coating Thermal Transport Properties Measurement Using Thermal Diffusion Wave Interferometry 热扩散波干涉法测量涂层热输运特性
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.tha2
R. Swimm
{"title":"Coating Thermal Transport Properties Measurement Using Thermal Diffusion Wave Interferometry","authors":"R. Swimm","doi":"10.1364/lmd.1987.tha2","DOIUrl":"https://doi.org/10.1364/lmd.1987.tha2","url":null,"abstract":"Recently there has been an upsurge of interest in measuring the thermal transport properties of optical coating materials in thin-film format in order to determine by what amount, if any, the coating properties differ from the bulk properties. The motivation for this interest is the possibility that thermal properties may be as important as optical properties in influencing the laser-induced damage threshold.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131001484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultraviolet Laser Etching: Diatomic Temperatures by Laser-Induced Fluorescence Measurements 紫外激光蚀刻:激光诱导荧光测量双原子温度
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.thd1
R. Dreyfus, R. Walkup, R. Kelly, R. Srinivasan
{"title":"Ultraviolet Laser Etching: Diatomic Temperatures by Laser-Induced Fluorescence Measurements","authors":"R. Dreyfus, R. Walkup, R. Kelly, R. Srinivasan","doi":"10.1364/lmd.1987.thd1","DOIUrl":"https://doi.org/10.1364/lmd.1987.thd1","url":null,"abstract":"Laser-induced etching is receiving significant attention, motivated by applications in microelectronics and medicine and by long standing concern about optical damage phenomena. In the present experiments, we emphasize etching with pulsed UV (excimer) lasers in the low fluence, i.e. near threshold, region. Under these conditions etching has been attributed to a variety of phenomena, among them thermally activated vaporization and photochemical bond breaking processes. The present work is aimed at distinguishing between the thermal and electronic processes for several materials. According to the thermal model, one requires a sufficiently high peak temperature that vaporization is the primary source of surface etching.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128850237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laser Mapping of Al-h+ Impurity Distribution in Vacuum Swept Crystalline Quartz 真空扫描结晶石英中Al-h+杂质分布的激光测绘
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.wb3
J. Anthes, P. Garcia, D. Koehler
{"title":"Laser Mapping of Al-h+ Impurity Distribution in Vacuum Swept Crystalline Quartz","authors":"J. Anthes, P. Garcia, D. Koehler","doi":"10.1364/lmd.1987.wb3","DOIUrl":"https://doi.org/10.1364/lmd.1987.wb3","url":null,"abstract":"We have used HeNe laser light absorption to perform 2-D spatial mapping of hole-compensated aluminum (Al-h+) impurity sites produced during vacuum sweeping of crystalline quartz. Application of an electric field parallel to the optic axis can produce a hole(1) trapped at a non-bonding oxygen ion (AlO4)° site. These hole-compensated Al-h+ sites introduce color center absorption. The electro-diffusion process (sweeping) is performed under elevated temperature and vacuum conditions. The diffusion process produces a time-dependent spatial distribution of the Al-h+ centers and associated A1-band optical absorption which is coincident with the 633-nm-HeNe laser wavelength. Spatial variations in the A1-band absorption for swept quartz and for quartz subjected to ionizing radiation are correlated with the observed(1) coloration. Devices fabricated from crystalline quartz with hole-compensated aluminum impurity sites are resistant to the effects of ionizing radiation. The 2-D mapping of optical absorption is compared to electron spin resonance (ESR) measurements of aluminum impurity concentration in samples of vacuum swept cultured quartz.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125397136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Developments in Raman Spectroscopy for Ion Implant Monitoring 拉曼光谱用于离子植入监测的研究进展
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.wa4
A.C. de Wilton, M. Simard-Normandin, P. Wong
{"title":"Developments in Raman Spectroscopy for Ion Implant Monitoring","authors":"A.C. de Wilton, M. Simard-Normandin, P. Wong","doi":"10.1364/lmd.1987.wa4","DOIUrl":"https://doi.org/10.1364/lmd.1987.wa4","url":null,"abstract":"As part of a strategy for development of in situ process monitoring for VLSI technology we are evaluating a number of optical techniques applicable to implantation and annealing processes. Techniques with potential for non-destructive characterization of patterned production wafers, rather than test wafers, are of primary interest. Consequently, the techniques to be considered must (i) be non-contact and non-contaminating; (ii) have high spatial resolution; (iii) provide rapid real time analysis; and (iv) use equipment that is adaptable for automatic or turn-key operation. Raman spectroscopy meets these criteria and the technique is well suited for studying materials for silicon technology (1). Features in the Raman phonon spectrum of implanted silicon can provide information on ion-damage prior to annealing or on the activation and distribution of dopant after annealing (2). In this paper we investigate the limits to the dose and energy of boron implants which can be detected by Raman spectroscopy.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115134254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laser Diagnostics of Cadmium Telluride: Crystal Quality and Exciton Dynamics 碲化镉的激光诊断:晶体质量和激子动力学
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.the2
D. Cooper, J. Bajaj, P. R. Newman, P. Rentzepis, J. Hutchinson
{"title":"Laser Diagnostics of Cadmium Telluride: Crystal Quality and Exciton Dynamics","authors":"D. Cooper, J. Bajaj, P. R. Newman, P. Rentzepis, J. Hutchinson","doi":"10.1364/lmd.1987.the2","DOIUrl":"https://doi.org/10.1364/lmd.1987.the2","url":null,"abstract":"Cadmium telluride is a II-VI semiconductor of increasing interest because of the use of its ternary alloy HgCdTe as a tunable-bandgap IR detector material. CdTe is often used as a substrate for the growth of HgCdTe epilayers and the detector performance depends upon the purity and crystal quality of both the epilayer and substrate.[1] Laser diagnostics of CdTe make possible the nondestructive screening of detector materials. In many cases electronic properties such as donor and acceptor concentrations can be determined without contact fabrication. Here we present both CW and time-resolved low-temperature spectra of CdTe. The CW spectra are useful for evaluating the crystal quality and the photoluminescence (PL) decays represent the first time-resolved results on single crystal CdTe.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130327471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of Optically Induced Periodic Structures on Semiconductor Surfaces 半导体表面光诱导周期结构的表征
Topical Meeting on Lasers in Materials Diagnostics Pub Date : 1900-01-01 DOI: 10.1364/lmd.1987.thb3
D. Podlesnik
{"title":"Characterization of Optically Induced Periodic Structures on Semiconductor Surfaces","authors":"D. Podlesnik","doi":"10.1364/lmd.1987.thb3","DOIUrl":"https://doi.org/10.1364/lmd.1987.thb3","url":null,"abstract":"Increasing applications are being found for laser and optical techniques in the fabrication of semiconductor devices and in the diagnostics of processing steps such as etching or metal deposition. For example, by using two interfering laser beams to initiate localized chemical reactions, spatially periodic structures can be produced on semiconductor surfaces. Practically, such structures are of interest because of the potential for utility in a variety of electrooptical and electronic applications.1 An important aspect of this processing is that the structure growth can be monitored in real time by observing the diffraction of the writing beams, thus allowing a precise control over the feature depth. In addition, because the structures can have a high spatial frequency, the process of their fabrication becomes a method of studying the wavelength-scale physical processes which influence the structure growth. These processes may involve, for example, the diffusion of photoexcited species or the magnification of the optical fields at the illuminated surfaces.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124054735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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