Picosecond Transient Reflectivity and Raman Gain Spectra of GaAs

Abstract

Recently Woodall and co-workers1 at IBM reported interesting results from a photowashing procedure applied to (100) GaAs. Unpinned behavior was observed immediately after washing. Photoluminescence yields measured from regions near the surface increased dramatically. The results suggested that the strong surface band bending ordinarily present in GaAs can be essentially eliminated by the photowashing procedure.