碲化镉的激光诊断:晶体质量和激子动力学

D. Cooper, J. Bajaj, P. R. Newman, P. Rentzepis, J. Hutchinson
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引用次数: 0

摘要

碲化镉是一种越来越受关注的II-VI半导体,因为它的三元合金HgCdTe用作可调谐带隙红外探测器材料。CdTe经常被用作生长HgCdTe脱毛层的衬底,探测器的性能取决于脱毛层和衬底的纯度和晶体质量。[1]激光诊断碲化镉使检测材料的无损筛选成为可能。在许多情况下,电子性质,如供体和受体的浓度,可以在没有接触制造的情况下确定。本文给出了CdTe的连续波和时间分辨低温光谱。连续波光谱可用于评价晶体质量,光致发光(PL)衰减代表单晶CdTe的首次时间分辨结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Laser Diagnostics of Cadmium Telluride: Crystal Quality and Exciton Dynamics
Cadmium telluride is a II-VI semiconductor of increasing interest because of the use of its ternary alloy HgCdTe as a tunable-bandgap IR detector material. CdTe is often used as a substrate for the growth of HgCdTe epilayers and the detector performance depends upon the purity and crystal quality of both the epilayer and substrate.[1] Laser diagnostics of CdTe make possible the nondestructive screening of detector materials. In many cases electronic properties such as donor and acceptor concentrations can be determined without contact fabrication. Here we present both CW and time-resolved low-temperature spectra of CdTe. The CW spectra are useful for evaluating the crystal quality and the photoluminescence (PL) decays represent the first time-resolved results on single crystal CdTe.
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