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2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)最新文献

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Measurement and Analysis of System-level ESD-induced Soft Failures of a Sense Amplifier Flip-Flop with Pseudo Differential Inputs 带伪差分输入的感测放大器系统级静电触发软故障的测量与分析
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509690
Myeongjo Jeong, Junsik Park, Jinwoo Kim, M. Seung, Seokkiu Lee, Jingook Kim
{"title":"Measurement and Analysis of System-level ESD-induced Soft Failures of a Sense Amplifier Flip-Flop with Pseudo Differential Inputs","authors":"Myeongjo Jeong, Junsik Park, Jinwoo Kim, M. Seung, Seokkiu Lee, Jingook Kim","doi":"10.23919/EOS/ESD.2018.8509690","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509690","url":null,"abstract":"A sense amplifier flip-flop, which is commonly used as an input receiver in a DRAM, is designed in the simplified motherboard and DIMM structures of a laptop PC. System-level ESD-induced soft failures of the sense amplifier flip-flop are measured and validated with SPICE simulation.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121120976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
System Level Esd Simulation In Spice: A Holistic Approach Spice中的系统级Esd仿真:一种整体方法
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509784
Y. Zhou, J. Hajjar, S. Parthasarathy, D. Clarke, Brian Moane
{"title":"System Level Esd Simulation In Spice: A Holistic Approach","authors":"Y. Zhou, J. Hajjar, S. Parthasarathy, D. Clarke, Brian Moane","doi":"10.23919/EOS/ESD.2018.8509784","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509784","url":null,"abstract":"Compliance to system-level ESD robustness at the product level is increasingly becoming a competitive advantage. Predicting the classification test level of a design prior to fabrication is critical in achieving first pass success and also addressing key concerns in this regards. Compact models and a simulation platform have been developed to predict system-level ESD robustness.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115066925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Device Failure from the Initial Current Step of a CDM Discharge CDM放电初始电流步导致的器件故障
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509694
D. Johnsson, K. Domanski, H. Gossner
{"title":"Device Failure from the Initial Current Step of a CDM Discharge","authors":"D. Johnsson, K. Domanski, H. Gossner","doi":"10.23919/EOS/ESD.2018.8509694","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509694","url":null,"abstract":"CDM discharges exhibit a fast initial current step when the stray capacitance of the pogo pin is charged. It is demonstrated that the high slew rate can damage sensitive gate oxides. The miscorrelation of CDM and CC-TLP methodologies is addressed by applying pulses with 20 ps rise time.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117091554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Study on Latchup Path between HV-LDMOS and LV-CMOS in a 0.16-μm 30-V/1.8-V BCD Technology 0.16-μm 30-V/1.8 v BCD技术中HV-LDMOS与LV-CMOS的闭锁路径研究
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509772
Chia-Tsen Dai, M. Ker, Yeh-Ning Jou, Shao-Chang Huang, Geeng-Lih Lin, Jian-Hsing Lee
{"title":"Study on Latchup Path between HV-LDMOS and LV-CMOS in a 0.16-μm 30-V/1.8-V BCD Technology","authors":"Chia-Tsen Dai, M. Ker, Yeh-Ning Jou, Shao-Chang Huang, Geeng-Lih Lin, Jian-Hsing Lee","doi":"10.23919/EOS/ESD.2018.8509772","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509772","url":null,"abstract":"The latchup path between high-voltage (HV) PMOS and low-voltage (LV) PMOS in a 0.16-μm 30-V/1.8-V bipolar-CMOS-DMOS (BCD) technology is studied. From the experiment results on silicon chip, this path can be easily induced into latchup state during the current-trigger latchup test. Therefore, the related layout rules should be carefully specified to avoid such HV-to-LV cross-domain latchup issue.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121295418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low Clamping Voltage Protection for Improvements of Powered ESD Robustness 低箝位电压保护提高电源ESD稳健性
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509793
Koki Narita, M. Okushima
{"title":"Low Clamping Voltage Protection for Improvements of Powered ESD Robustness","authors":"Koki Narita, M. Okushima","doi":"10.23919/EOS/ESD.2018.8509793","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509793","url":null,"abstract":"An on-chip protection for improvements of powered ESD robustness is presented. The proposed power clamp achieved to reduce the clamping voltage against powered ESD events compared to a conventional RC-riggered clamp by extending of the big-MOS active time with also consideration to false activation.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"208 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131952655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Grounding Considerations for RFIC Automated Handling Equipment Testing RFIC自动处理设备测试的接地考虑
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509786
L. H. Koh, Y. H. Goh
{"title":"Grounding Considerations for RFIC Automated Handling Equipment Testing","authors":"L. H. Koh, Y. H. Goh","doi":"10.23919/EOS/ESD.2018.8509786","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509786","url":null,"abstract":"This paper describes the grounding cables selection process in mitigating random degradation of more than 200 automated tester handlers’ parametric test yield in a back-end semiconductor factory, testing Radio Frequency Integrated Circuit ESD sensitive devices, due to stochastic high frequency ground current noise issues.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133317679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ESD Risks of Containers Made of Conductive Compounds 导电化合物容器的ESD风险
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509696
T. Viheriäkoski, Eira Kärjä, Pekka Horsma-aho, Reinhold Gärtner, J. Smallwood
{"title":"ESD Risks of Containers Made of Conductive Compounds","authors":"T. Viheriäkoski, Eira Kärjä, Pekka Horsma-aho, Reinhold Gärtner, J. Smallwood","doi":"10.23919/EOS/ESD.2018.8509696","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509696","url":null,"abstract":"ESD risk scenarios of conductive containers were assessed by using a system level test generator and different configurations of discharge electrodes. Energy coupling inside the container can be minimized by an applicable mechanical design. Avoidance of the direct or capacitive drain and return path mitigates energy coupling and reduces ESD risks efficiently.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124380091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
EOS/ESD 2018 Electrical Overstress/Electrostatic Discharge Symposium Proceedings EOS/ESD 2018电气超应力/静电放电研讨会论文集
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/eos/esd.2018.8509785
{"title":"EOS/ESD 2018 Electrical Overstress/Electrostatic Discharge Symposium Proceedings","authors":"","doi":"10.23919/eos/esd.2018.8509785","DOIUrl":"https://doi.org/10.23919/eos/esd.2018.8509785","url":null,"abstract":"","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123474540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EOS/ESD 2018 Bios EOS/ESD 2018 Bios
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/eos/esd.2018.8509742
{"title":"EOS/ESD 2018 Bios","authors":"","doi":"10.23919/eos/esd.2018.8509742","DOIUrl":"https://doi.org/10.23919/eos/esd.2018.8509742","url":null,"abstract":"","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129406541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Risks of Electric Fields for ESD Sensitive Devices 静电敏感器件的电场危险
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509774
W. Stadler, J. Niemesheim, Stefan Seidl, R. Gaertner, Toni Viheriaekoski
{"title":"The Risks of Electric Fields for ESD Sensitive Devices","authors":"W. Stadler, J. Niemesheim, Stefan Seidl, R. Gaertner, Toni Viheriaekoski","doi":"10.23919/EOS/ESD.2018.8509774","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509774","url":null,"abstract":"For objects with different sizes, distances and orientations to an electric field, potentials, charging, and discharge currents of the objects are measured in order to assess the ESD risk due to the E-field. The current rules in ANSI/ESD S20.20 and IEC 61340-5-1 might need an update to cover worst-case scenarios.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123167036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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