CDM放电初始电流步导致的器件故障

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI:10.23919/EOS/ESD.2018.8509694

D. Johnsson, K. Domanski, H. Gossner

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引用次数: 10

摘要

当弹簧脚的杂散电容被充电时，CDM放电表现出快速的初始电流阶跃。结果表明，高转换率会破坏敏感栅氧化物。CDM和CC-TLP方法的不相关是通过应用20 ps上升时间的脉冲来解决的。

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Device Failure from the Initial Current Step of a CDM Discharge

CDM discharges exhibit a fast initial current step when the stray capacitance of the pogo pin is charged. It is demonstrated that the high slew rate can damage sensitive gate oxides. The miscorrelation of CDM and CC-TLP methodologies is addressed by applying pulses with 20 ps rise time.

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来源期刊

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

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