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2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)最新文献

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Device Failure from the Initial Current Step of a CDM Discharge CDM放电初始电流步导致的器件故障
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/eos/esd.2018.8509779
D. Johnsson, K. Domanski, H. Gossner
{"title":"Device Failure from the Initial Current Step of a CDM Discharge","authors":"D. Johnsson, K. Domanski, H. Gossner","doi":"10.23919/eos/esd.2018.8509779","DOIUrl":"https://doi.org/10.23919/eos/esd.2018.8509779","url":null,"abstract":"CDM discharges exhibit a fast initial current step when the stray capacitance of the pogo pin is charged. It is demonstrated that the high slew rate can damage sensitive gate oxides. The miscorrelation of CDM and CC-TLP methodologies is addressed by applying pulses with 20 ps rise time.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126076892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EOS/ESD 2018 General Chair Letter EOS/ESD 2018主席函
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/eos/esd.2018.8509686
{"title":"EOS/ESD 2018 General Chair Letter","authors":"","doi":"10.23919/eos/esd.2018.8509686","DOIUrl":"https://doi.org/10.23919/eos/esd.2018.8509686","url":null,"abstract":"","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123883804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2017 President Award: Terry Welsher 2017年总统奖:Terry Welsher
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/eos/esd.2018.8509755
{"title":"2017 President Award: Terry Welsher","authors":"","doi":"10.23919/eos/esd.2018.8509755","DOIUrl":"https://doi.org/10.23919/eos/esd.2018.8509755","url":null,"abstract":"","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122439638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hardware and Software Combined Detection of SystemLevel ESD-Induced Soft Failures 系统级静电诱发软故障的软硬件联合检测
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509783
Seep Vora, Rui Jiang, P. Vijayaraj, Keven Feng, Yang Xiu, Shobha Vasudevan, E. Rosenbaum
{"title":"Hardware and Software Combined Detection of SystemLevel ESD-Induced Soft Failures","authors":"Seep Vora, Rui Jiang, P. Vijayaraj, Keven Feng, Yang Xiu, Shobha Vasudevan, E. Rosenbaum","doi":"10.23919/EOS/ESD.2018.8509783","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509783","url":null,"abstract":"A semi-custom microcontroller is subjected to IEC-61000-4-2 ESD. A scan chain and memory read-out programs enable identification of the hardware blocks that experience soft failures. Voltage monitors are used to correlate the occurrence of those failures with the magnitude of noise on power supplies.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134193796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Comparison of surface and volume resistance measurements made with standard and non-standard electrodes 用标准和非标准电极测量表面和体积电阻的比较
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509787
J. Smallwood
{"title":"Comparison of surface and volume resistance measurements made with standard and non-standard electrodes","authors":"J. Smallwood","doi":"10.23919/EOS/ESD.2018.8509787","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509787","url":null,"abstract":"Surface and volume resistance measurements made with standard electrodes are compared with various nonstandard electrodes using a reference material. Measurements were made on two resistive materials, ESD shielding bag film and pocket tape ESD control materials.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114649936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An ESD Case Study of Defect Analysis in High Speed Electronics Manufacturing 高速电子制造中ESD缺陷分析案例研究
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509738
C. Almeras
{"title":"An ESD Case Study of Defect Analysis in High Speed Electronics Manufacturing","authors":"C. Almeras","doi":"10.23919/EOS/ESD.2018.8509738","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509738","url":null,"abstract":"A high volume, high speed manufacturer experienced component defects at a rate of 1 in every 30 boards. Failure signature was CDM–like. Root cause evaluation was undertaken to find the culprit/s and implement corrective actions. Details of the problem, investigation and corrective action are discussed in this paper.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123220865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Enhanced IC Modeling Methodology for System-level ESD Simulation 系统级ESD仿真的增强IC建模方法
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509751
J. Xiong, Zaichen Chen, Yang Xiu, Z. Mu, M. Raginsky, E. Rosenbaum
{"title":"Enhanced IC Modeling Methodology for System-level ESD Simulation","authors":"J. Xiong, Zaichen Chen, Yang Xiu, Z. Mu, M. Raginsky, E. Rosenbaum","doi":"10.23919/EOS/ESD.2018.8509751","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509751","url":null,"abstract":"To enable accurate system-level ESD simulation, the quasi-static I-V model of an IC is enhanced through kernel regression to reflect its circuit board dependency; alternatively, a recurrent neural network may be used to generate a non-quasi-static transient model. Hybrid electromagnetic and circuit simulation is demonstrated for ESD-induced noise coupling analysis.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123826010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A Proto-type ESD Generator for System Immunity Test of Wearable Devices 一种用于可穿戴设备系统抗扰度测试的ESD发生器样机
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509740
Junsik Park, Jong-Sung Lee, Cheolgu Jo, Byongsu Seol, Jingook Kim
{"title":"A Proto-type ESD Generator for System Immunity Test of Wearable Devices","authors":"Junsik Park, Jong-Sung Lee, Cheolgu Jo, Byongsu Seol, Jingook Kim","doi":"10.23919/EOS/ESD.2018.8509740","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509740","url":null,"abstract":"A proto-type ESD generator for system immunity test of wearable devices is proposed. A wearable device is charged up to an ESD test voltage together with the designed ESD generator, and discharged to the ESD current target. The proposed ESD generator for wearable devices is validated with a real ESD measurement.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121290557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Design Optimization of a Breakdown Silicon Controlled Rectifier (BDSCR) for Cell Phone Antenna Switch Pin Electrostatic Discharge (ESD) Protection 用于手机天线开关引脚静电放电保护的击穿可控硅整流器(BDSCR)的优化设计
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509768
Lin Lin, R. Gauthier, A. Loiseau, X. Lu
{"title":"Design Optimization of a Breakdown Silicon Controlled Rectifier (BDSCR) for Cell Phone Antenna Switch Pin Electrostatic Discharge (ESD) Protection","authors":"Lin Lin, R. Gauthier, A. Loiseau, X. Lu","doi":"10.23919/EOS/ESD.2018.8509768","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509768","url":null,"abstract":"A new Breakdown Silicon-Controlled-Rectifier (BDSCR) developed for effective ESD protection on antenna ports in cell phone applications is presented in an 180nm silicon-on-insulator (SOI) technology. The new OPPC-BDSCR design achieved leakage, breakdown voltage scaling and ESD requirements.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128780945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
TVS Transient Behavior Characterization and SPICEBased Behavior Model TVS瞬态行为表征及基于spice的行为模型
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI: 10.23919/EOS/ESD.2018.8509780
Pengyu Wei, Giorgi Maghlakelidze, A. Patnaik, H. Gossner, D. Pommerenke
{"title":"TVS Transient Behavior Characterization and SPICEBased Behavior Model","authors":"Pengyu Wei, Giorgi Maghlakelidze, A. Patnaik, H. Gossner, D. Pommerenke","doi":"10.23919/EOS/ESD.2018.8509780","DOIUrl":"https://doi.org/10.23919/EOS/ESD.2018.8509780","url":null,"abstract":"A SPICE model for the transient behavior of TVS devices is presented. TVS devices under ESD stress do not turn on instantaneously and a transient overshoot can be oUserved at start-up. This model includes small signal RF behavior, quasi-static VI curve, inductive overshoot, conductivity modulation, snapUack trigger delay and the ability to be used on any SPICE simulation.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116895782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
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