Design Optimization of a Breakdown Silicon Controlled Rectifier (BDSCR) for Cell Phone Antenna Switch Pin Electrostatic Discharge (ESD) Protection

Abstract

A new Breakdown Silicon-Controlled-Rectifier (BDSCR) developed for effective ESD protection on antenna ports in cell phone applications is presented in an 180nm silicon-on-insulator (SOI) technology. The new OPPC-BDSCR design achieved leakage, breakdown voltage scaling and ESD requirements.