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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)最新文献

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High power, highly reliable Al-free 940 nm diode lasers 高功率，高可靠的无铝940nm二极管激光器
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI: 10.1109/ISLC.2000.882269
G. Erbert, G. Beister, A. Knauer, J. Sebastian, R. Hulsewede, H. Wenzel, M. Weyers, G. Trankle
{"title":"High power, highly reliable Al-free 940 nm diode lasers","authors":"G. Erbert, G. Beister, A. Knauer, J. Sebastian, R. Hulsewede, H. Wenzel, M. Weyers, G. Trankle","doi":"10.1109/ISLC.2000.882269","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882269","url":null,"abstract":"We have demonstrated the excellent performance of high power Al-free InGaAs QW diode lasers in the wavelength range around 940 nm making these devices very well suited for pumping, material processing and telecommunication applications.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"565 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132980838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
400 mW 980 nm-module with very high power conversion efficiency 400兆瓦980纳米模块，具有非常高的功率转换效率
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI: 10.1109/ISLC.2000.882273
B. Schmidt, S. Pawlik, H. Rothfritz, A. Thies, S. Mordiek, C. Harder
{"title":"400 mW 980 nm-module with very high power conversion efficiency","authors":"B. Schmidt, S. Pawlik, H. Rothfritz, A. Thies, S. Mordiek, C. Harder","doi":"10.1109/ISLC.2000.882273","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882273","url":null,"abstract":"Highly reliable single mode high power laser diodes with an emission wavelength of around 980 nm are key elements for erbium doped fiber amplifiers (EDFA). The increasing demand for higher amplification power in future dense wavelength division multiplex (DWDM) systems forces the development of pump laser diodes with an operation power regime of 450 mW and more. In order to optimize our high power InGaAs-AlGaAs SQW laser diode we have therefore reduced the vertical far-field down to 17/spl deg/ while avoiding a reduction in power conversion efficiency.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130092792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Diodes with window-mirror structure 具有窗镜结构的二极管
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI: 10.1109/ISLC.2000.882306
Z. Kawazu, Y. Tashiro, A. Shima, D. Suzuki, H. Nishiguchi, T. Yagi, E. Omura
{"title":"Diodes with window-mirror structure","authors":"Z. Kawazu, Y. Tashiro, A. Shima, D. Suzuki, H. Nishiguchi, T. Yagi, E. Omura","doi":"10.1109/ISLC.2000.882306","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882306","url":null,"abstract":"The high power operation of the lateral mode stabilized 785nm AlGaAs LD with the window-mirror structure has been demonstrated. The stable lateral mode operation up to 250mW (kink level of 280 mW) is realized. To the best our knowledge, this is the highest power record among the narrow stripe LDs with a wavelength of 785 nm and is suitable for CD ROM disc drives.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121923407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new approach to improved green emitting II-VI laser diodes 一种改进绿色发光II-VI激光二极管的新方法
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI: 10.1109/ISLC.2000.882310
M. Strassburg, O. Schulz, U. W. Pohl, D. Bimberg, M. Klude, D. Hommel, S. Itoh, K. Nakano, A. Ishibashi
{"title":"A new approach to improved green emitting II-VI laser diodes","authors":"M. Strassburg, O. Schulz, U. W. Pohl, D. Bimberg, M. Klude, D. Hommel, S. Itoh, K. Nakano, A. Ishibashi","doi":"10.1109/ISLC.2000.882310","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882310","url":null,"abstract":"The realisation of green semiconductor lasers is the key to new optoelectronic display systems. The ZnCdSSe-system has already proven its potential for laser diodes in the spectral range of 490-540 nm. To achieve commercially relevant lifetimes longer than 400 hours large improvements are however necessary. In this contribution we demonstrate lithium-containing contact structures for the p-side and implantation induced disordering (IID) defined index guiding leading to dramatically improved laser characteristics like largely reduced threshold current density.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127912847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Continuous wave operation of 1.3 /spl mu/m vertical cavity InGaAsN quantum well lasers 1.3 /spl mu/m垂直腔InGaAsN量子阱激光器的连续波工作
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-07-19 DOI: 10.1109/ISLC.2000.882262
A. Fischer, J. Klem, K. Choquette, O. Blum, A. Allerman, I. J. Fritz, S. Kurtz, W. Breiland, R. Sieg, K. Geib, J. Scott, R. Naone
{"title":"Continuous wave operation of 1.3 /spl mu/m vertical cavity InGaAsN quantum well lasers","authors":"A. Fischer, J. Klem, K. Choquette, O. Blum, A. Allerman, I. J. Fritz, S. Kurtz, W. Breiland, R. Sieg, K. Geib, J. Scott, R. Naone","doi":"10.1109/ISLC.2000.882262","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882262","url":null,"abstract":"Vertical-cavity lasers emitting at 1.3 /spl mu/m are extremely attractive for high bandwidth fiber communications where it is advantageous to operate at the dispersion minimum of silica optical fiber. To date, VCSELs based on pseudomorphic GaAs materials have achieved lasing emission only slightly longer than 1.3 /spl mu/m. We report the first 1.3 /spl mu/m selectively oxidized VCSELs using InGaAsN quantum wells which operate at continuous wave at and above room temperature.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121731662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Semiconductor e-h plasma lasers 半导体e-h等离子激光器
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-06-06 DOI: 10.1109/ISLC.2000.882279
F. Zutavern, A. Baca, W. Chow, M. Hafich, H. Hjalmarson, G. Loubriel, A. Mar, M. O’Malley, G. A. Vawter
{"title":"Semiconductor e-h plasma lasers","authors":"F. Zutavern, A. Baca, W. Chow, M. Hafich, H. Hjalmarson, G. Loubriel, A. Mar, M. O’Malley, G. A. Vawter","doi":"10.1109/ISLC.2000.882279","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882279","url":null,"abstract":"High energy, electrically controlled, compact, short-pulse lasers are useful for active optical sensors. We present a new class of semiconductor laser that can potentially produce much more short pulse energy than conventional (injection-pumped) semiconductor lasers (CSL) because this new laser is not limited in volume or aspect ratio by the depth of a p-n junction. We have tested current filament semiconductor lasers (CFSL) that have produced 75nJ of 890nm radiation in 1.5ns (50W peak), approximately ten times more energy than ISL. These lasers are created from current filaments in semi-insulating GaAs and, in contrast to CSL, are not based on current injection. Instead, low-field avalanche carrier generation produces a high-density, charge-neutral plasma channel with the required carrier density distribution for lasing. This paper will report spectral narrowing, lasing thresholds, beam divergence, temporal narrowing, and energies which imply lasing for several configurations of CFSL. It will also discuss active volume scaling based on recent high current tests.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131620163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Temperature dependence of the wavelength of quantum dot lasers 量子点激光器波长的温度依赖性
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 1900-01-01 DOI: 10.1109/ISLC.2000.882324
J. Thomson, H. Summers, P. Smowton, E. Herrmann, P. Blood, M. Hopkinson
{"title":"Temperature dependence of the wavelength of quantum dot lasers","authors":"J. Thomson, H. Summers, P. Smowton, E. Herrmann, P. Blood, M. Hopkinson","doi":"10.1109/ISLC.2000.882324","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882324","url":null,"abstract":"We have studied the properties of quantum dot lasers comprising a single layer of InGaAs dots set in a single GaAs quantum well 100 A wide in a waveguide core region of AlGaAs with cladding layers of AlGaAs. Measurements have been made of the optical absorption, optical mode loss and gain spectra as a function of temperature by single pass technique using a device with a segmented contact. We have made detailed studies of the gain spectra as a function of temperature which have enabled us to identify the origins of this temperature insensitivity and to infer information regarding the form of the broadened distribution of dot states.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124079537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mid-IR type-I and type-II quantum cascade lasers 中红外i型和ii型量子级联激光器
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 1900-01-01 DOI: 10.1109/ISLC.2000.882292
W. Hwang, Chih-Hsiang Lin, S. Zaitsev, J. Um, Hong-Wen Ren
{"title":"Mid-IR type-I and type-II quantum cascade lasers","authors":"W. Hwang, Chih-Hsiang Lin, S. Zaitsev, J. Um, Hong-Wen Ren","doi":"10.1109/ISLC.2000.882292","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882292","url":null,"abstract":"In the past three years, we have been optimizing an alternative cascade configuration based on interband transitions in type-II InAs/InGaSb/AlSb quantum wells (QWs). We have achieved an internal quantum efficiency (IQE) of 580% and a CW output power of 53 mW were achieved at 80 K at 4.4 /spl mu/m. The maximum operation temperature for a 4.2 /spl mu/m type-II IC laser was 220 K with a T/sub 0/ of 285 K around 100 K. A 25-stage interband cascade (IC) laser with a W active region and a third hole quantum well for the suppression of leakage current has exhibited lasing up to 286 K at 3.5 /spl mu/m. We report our most recent results of type-II IC lasers. We also grew 4.6 and a 7.4 /spl mu/m type-I QC laser structures.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116934892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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