J. Thomson, H. Summers, P. Smowton, E. Herrmann, P. Blood, M. Hopkinson
{"title":"Temperature dependence of the wavelength of quantum dot lasers","authors":"J. Thomson, H. Summers, P. Smowton, E. Herrmann, P. Blood, M. Hopkinson","doi":"10.1109/ISLC.2000.882324","DOIUrl":null,"url":null,"abstract":"We have studied the properties of quantum dot lasers comprising a single layer of InGaAs dots set in a single GaAs quantum well 100 A wide in a waveguide core region of AlGaAs with cladding layers of AlGaAs. Measurements have been made of the optical absorption, optical mode loss and gain spectra as a function of temperature by single pass technique using a device with a segmented contact. We have made detailed studies of the gain spectra as a function of temperature which have enabled us to identify the origins of this temperature insensitivity and to infer information regarding the form of the broadened distribution of dot states.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have studied the properties of quantum dot lasers comprising a single layer of InGaAs dots set in a single GaAs quantum well 100 A wide in a waveguide core region of AlGaAs with cladding layers of AlGaAs. Measurements have been made of the optical absorption, optical mode loss and gain spectra as a function of temperature by single pass technique using a device with a segmented contact. We have made detailed studies of the gain spectra as a function of temperature which have enabled us to identify the origins of this temperature insensitivity and to infer information regarding the form of the broadened distribution of dot states.