Mid-IR type-I and type-II quantum cascade lasers

W. Hwang, Chih-Hsiang Lin, S. Zaitsev, J. Um, Hong-Wen Ren
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Abstract

In the past three years, we have been optimizing an alternative cascade configuration based on interband transitions in type-II InAs/InGaSb/AlSb quantum wells (QWs). We have achieved an internal quantum efficiency (IQE) of 580% and a CW output power of 53 mW were achieved at 80 K at 4.4 /spl mu/m. The maximum operation temperature for a 4.2 /spl mu/m type-II IC laser was 220 K with a T/sub 0/ of 285 K around 100 K. A 25-stage interband cascade (IC) laser with a W active region and a third hole quantum well for the suppression of leakage current has exhibited lasing up to 286 K at 3.5 /spl mu/m. We report our most recent results of type-II IC lasers. We also grew 4.6 and a 7.4 /spl mu/m type-I QC laser structures.
中红外i型和ii型量子级联激光器
在过去的三年中,我们一直在优化基于ii型InAs/InGaSb/AlSb量子阱(qw)带间跃迁的备选级联配置。我们已经实现了580%的内部量子效率(IQE)和53 mW的连续输出功率,在80 K下达到4.4 /spl mu/m。4.2 /spl mu/m ii型IC激光器的最大工作温度为220 K, T/sub / 0为285 K,约为100 K。具有W有源区和第三空穴量子阱的25级带间级联(IC)激光器在3.5 /spl mu/m下的激光输出高达286 K。我们报告了ii型IC激光器的最新结果。我们还生长了4.6个和7.4个/亩/米的i型QC激光器结构。
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