W. Hwang, Chih-Hsiang Lin, S. Zaitsev, J. Um, Hong-Wen Ren
{"title":"Mid-IR type-I and type-II quantum cascade lasers","authors":"W. Hwang, Chih-Hsiang Lin, S. Zaitsev, J. Um, Hong-Wen Ren","doi":"10.1109/ISLC.2000.882292","DOIUrl":null,"url":null,"abstract":"In the past three years, we have been optimizing an alternative cascade configuration based on interband transitions in type-II InAs/InGaSb/AlSb quantum wells (QWs). We have achieved an internal quantum efficiency (IQE) of 580% and a CW output power of 53 mW were achieved at 80 K at 4.4 /spl mu/m. The maximum operation temperature for a 4.2 /spl mu/m type-II IC laser was 220 K with a T/sub 0/ of 285 K around 100 K. A 25-stage interband cascade (IC) laser with a W active region and a third hole quantum well for the suppression of leakage current has exhibited lasing up to 286 K at 3.5 /spl mu/m. We report our most recent results of type-II IC lasers. We also grew 4.6 and a 7.4 /spl mu/m type-I QC laser structures.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882292","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In the past three years, we have been optimizing an alternative cascade configuration based on interband transitions in type-II InAs/InGaSb/AlSb quantum wells (QWs). We have achieved an internal quantum efficiency (IQE) of 580% and a CW output power of 53 mW were achieved at 80 K at 4.4 /spl mu/m. The maximum operation temperature for a 4.2 /spl mu/m type-II IC laser was 220 K with a T/sub 0/ of 285 K around 100 K. A 25-stage interband cascade (IC) laser with a W active region and a third hole quantum well for the suppression of leakage current has exhibited lasing up to 286 K at 3.5 /spl mu/m. We report our most recent results of type-II IC lasers. We also grew 4.6 and a 7.4 /spl mu/m type-I QC laser structures.