B. Schmidt, S. Pawlik, H. Rothfritz, A. Thies, S. Mordiek, C. Harder
{"title":"400 mW 980 nm-module with very high power conversion efficiency","authors":"B. Schmidt, S. Pawlik, H. Rothfritz, A. Thies, S. Mordiek, C. Harder","doi":"10.1109/ISLC.2000.882273","DOIUrl":null,"url":null,"abstract":"Highly reliable single mode high power laser diodes with an emission wavelength of around 980 nm are key elements for erbium doped fiber amplifiers (EDFA). The increasing demand for higher amplification power in future dense wavelength division multiplex (DWDM) systems forces the development of pump laser diodes with an operation power regime of 450 mW and more. In order to optimize our high power InGaAs-AlGaAs SQW laser diode we have therefore reduced the vertical far-field down to 17/spl deg/ while avoiding a reduction in power conversion efficiency.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882273","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Highly reliable single mode high power laser diodes with an emission wavelength of around 980 nm are key elements for erbium doped fiber amplifiers (EDFA). The increasing demand for higher amplification power in future dense wavelength division multiplex (DWDM) systems forces the development of pump laser diodes with an operation power regime of 450 mW and more. In order to optimize our high power InGaAs-AlGaAs SQW laser diode we have therefore reduced the vertical far-field down to 17/spl deg/ while avoiding a reduction in power conversion efficiency.