400兆瓦980纳米模块，具有非常高的功率转换效率

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882273

B. Schmidt, S. Pawlik, H. Rothfritz, A. Thies, S. Mordiek, C. Harder

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引用次数: 2

摘要

发射波长在980 nm左右的高可靠性单模大功率激光二极管是掺铒光纤放大器(EDFA)的关键器件。在未来的密集波分复用(DWDM)系统中，对更高放大功率的需求日益增长，迫使工作功率为450 mW及以上的泵浦激光二极管的发展。为了优化我们的高功率InGaAs-AlGaAs SQW激光二极管，我们因此将垂直远场降低到17/spl度/，同时避免了功率转换效率的降低。

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400 mW 980 nm-module with very high power conversion efficiency

Highly reliable single mode high power laser diodes with an emission wavelength of around 980 nm are key elements for erbium doped fiber amplifiers (EDFA). The increasing demand for higher amplification power in future dense wavelength division multiplex (DWDM) systems forces the development of pump laser diodes with an operation power regime of 450 mW and more. In order to optimize our high power InGaAs-AlGaAs SQW laser diode we have therefore reduced the vertical far-field down to 17/spl deg/ while avoiding a reduction in power conversion efficiency.

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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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