High power, highly reliable Al-free 940 nm diode lasers

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882269

G. Erbert, G. Beister, A. Knauer, J. Sebastian, R. Hulsewede, H. Wenzel, M. Weyers, G. Trankle

引用次数: 30

Abstract

We have demonstrated the excellent performance of high power Al-free InGaAs QW diode lasers in the wavelength range around 940 nm making these devices very well suited for pumping, material processing and telecommunication applications.

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高功率，高可靠的无铝940nm二极管激光器

我们已经证明了在940 nm波长范围内的高功率无al InGaAs QW二极管激光器的优异性能，使这些器件非常适合泵送，材料加工和电信应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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