一种改进绿色发光II-VI激光二极管的新方法

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882310

M. Strassburg, O. Schulz, U. W. Pohl, D. Bimberg, M. Klude, D. Hommel, S. Itoh, K. Nakano, A. Ishibashi

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引用次数: 0

摘要

绿色半导体激光器的实现是新型光电显示系统的关键。zncdsse系统已经证明了其在490-540 nm光谱范围内的激光二极管的潜力。然而，为了实现超过400小时的商业相关寿命，需要进行大量改进。在这篇论文中，我们展示了p侧的含锂接触结构和注入诱导无序(IID)定义的指数引导，从而显着改善了激光特性，如大大降低了阈值电流密度。

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A new approach to improved green emitting II-VI laser diodes

The realisation of green semiconductor lasers is the key to new optoelectronic display systems. The ZnCdSSe-system has already proven its potential for laser diodes in the spectral range of 490-540 nm. To achieve commercially relevant lifetimes longer than 400 hours large improvements are however necessary. In this contribution we demonstrate lithium-containing contact structures for the p-side and implantation induced disordering (IID) defined index guiding leading to dramatically improved laser characteristics like largely reduced threshold current density.

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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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