量子点激光器波长的温度依赖性

J. Thomson, H. Summers, P. Smowton, E. Herrmann, P. Blood, M. Hopkinson
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引用次数: 0

摘要

我们研究了由单层InGaAs点组成的量子点激光器的特性,该量子点激光器设置在AlGaAs波导核心区域的一个100 a宽的GaAs量子阱中,并包覆AlGaAs层。利用分段触点装置,利用单通技术测量了光吸收光谱、光模式损耗光谱和增益光谱随温度的变化。我们对增益光谱作为温度的函数进行了详细的研究,这使我们能够确定这种温度不敏感的来源,并推断出有关点态的展宽分布形式的信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature dependence of the wavelength of quantum dot lasers
We have studied the properties of quantum dot lasers comprising a single layer of InGaAs dots set in a single GaAs quantum well 100 A wide in a waveguide core region of AlGaAs with cladding layers of AlGaAs. Measurements have been made of the optical absorption, optical mode loss and gain spectra as a function of temperature by single pass technique using a device with a segmented contact. We have made detailed studies of the gain spectra as a function of temperature which have enabled us to identify the origins of this temperature insensitivity and to infer information regarding the form of the broadened distribution of dot states.
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