1.3 /spl mu/m垂直腔InGaAsN量子阱激光器的连续波工作

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-07-19 DOI:10.1109/ISLC.2000.882262

A. Fischer, J. Klem, K. Choquette, O. Blum, A. Allerman, I. J. Fritz, S. Kurtz, W. Breiland, R. Sieg, K. Geib, J. Scott, R. Naone

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引用次数: 1

摘要

发射速度为1.3 /spl μ m /m的垂直腔激光器在高带宽光纤通信中极具吸引力，它有利于在硅光纤色散最小的情况下工作。迄今为止，基于伪晶GaAs材料的vcsel实现的激光发射仅略长于1.3 /spl mu/m。我们报道了第一个1.3 /spl mu/m的选择性氧化VCSELs，使用InGaAsN量子阱在室温及以上的连续波下工作。

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Continuous wave operation of 1.3 /spl mu/m vertical cavity InGaAsN quantum well lasers

Vertical-cavity lasers emitting at 1.3 /spl mu/m are extremely attractive for high bandwidth fiber communications where it is advantageous to operate at the dispersion minimum of silica optical fiber. To date, VCSELs based on pseudomorphic GaAs materials have achieved lasing emission only slightly longer than 1.3 /spl mu/m. We report the first 1.3 /spl mu/m selectively oxidized VCSELs using InGaAsN quantum wells which operate at continuous wave at and above room temperature.

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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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