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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)最新文献

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Wavelength, modal and power stabilization of tunable electro-absorption modulated, distributed Bragg reflector lasers 可调谐电吸收调制分布式布拉格反射激光器的波长、模态和功率稳定性
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI: 10.1109/ISLC.2000.882282
D. Ackerman, K. Dreyer, U. Koren, J. Stayt, S. L. Broutin, W. Asous, J.E. Johnson, L. Ketelsen, K. Kamath, S. O’Brien, W. Shakespeare, M. Eshelman, M. Meyers, D. A. Snyder, E. S. Mak
{"title":"Wavelength, modal and power stabilization of tunable electro-absorption modulated, distributed Bragg reflector lasers","authors":"D. Ackerman, K. Dreyer, U. Koren, J. Stayt, S. L. Broutin, W. Asous, J.E. Johnson, L. Ketelsen, K. Kamath, S. O’Brien, W. Shakespeare, M. Eshelman, M. Meyers, D. A. Snyder, E. S. Mak","doi":"10.1109/ISLC.2000.882282","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882282","url":null,"abstract":"Optical sources for dense wavelength division multiplexed (DWDM) systems must produce constant wavelength and power output over a system lifetime despite aging-induced changes that affect both wavelength and power. Tunable sources, such as distributed Bragg reflector (DBR) lasers, require additional modal stabilization to prevent aging-induced failure due to mode hopping. We demonstrate a practical scheme for simultaneously stabilizing the wavelength, mode and power of a tunable DBR laser which was then observed to operate stabilized and error-free within a transmitter at 2.5Gb/s over 680km ofnon-dispersion shifted fiber. Feedback is proven robust against sudden and large perturbations. A five-section electro-absorption modulated (EA) DBR laser serves as an electrically tunable source coupled to three closed feedback loops, which independently provide robust modal, wavelength and power stabilization.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129914465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Parasitics and design considerations on oxide-implant VCSELs 氧化物植入VCSELs的寄生特性及设计考虑
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI: 10.1109/ISLC.2000.882305
C. Chang, L. Chrostowski, C. Chang-Hasnain
{"title":"Parasitics and design considerations on oxide-implant VCSELs","authors":"C. Chang, L. Chrostowski, C. Chang-Hasnain","doi":"10.1109/ISLC.2000.882305","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882305","url":null,"abstract":"VCSELs are promising high-speed transmitters in lightwave communication systems. Two major device structures used today are oxide-confined and proton-implanted VCSELs. The former has a high capacitance due to the thin oxide layer, whereas the latter has a high resistance due to a small injection area. Oxide plus implant VCSELs was demonstrated to have >20 GHz modulation bandwidth. However, the design rule and trade-off on oxide and implant dimensions and their impact on VCSEL's modulation response have not been clearly shown. In the paper, we fabricated VCSELs of oxide-only and oxide-implant structures on the same sample and show that, conclusively and quantitatively, the additional implant process increases VCSEL modulation speed. A model is proposed to design high-speed VCSELs by removing the parasitic limitation.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"207 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114313966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
1.5 W operation of superluminescent diode with highly strained GaInAs/GaAs quantum well emitting at 1.2 /spl mu/m band 具有高应变GaInAs/GaAs量子阱的超发光二极管在1.2 /spl mu/m波段的1.5 W工作
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI: 10.1109/ISLC.2000.882293
F. Koyama, D. Schlenker, T. Miyamoto, Z. Chen, T. Yamatoya, T. Kondo, K. Iga
{"title":"1.5 W operation of superluminescent diode with highly strained GaInAs/GaAs quantum well emitting at 1.2 /spl mu/m band","authors":"F. Koyama, D. Schlenker, T. Miyamoto, Z. Chen, T. Yamatoya, T. Kondo, K. Iga","doi":"10.1109/ISLC.2000.882293","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882293","url":null,"abstract":"Presents the high power operation of a tapered superluminescent diode with highly strained GaInAs/GaAs QWs emitting at in the 1.2 /spl mu/m band. As its background, we achieved the wavelength extension of GaInAs/GaAs QWs beyond 1.2 /spl mu/m by using highly strained QWs. Also, we presented low threshold and excellent temperature characteristics of 1.2 /spl mu/m QW lasers, and their application for single mode fiber datacom. However, there have been difficulties in realizing high power light sources in the wavelength range of 1.1-1.2 /spl mu/m. They may open up new applications, which include pumping for 1.2-1.3 /spl mu/m Raman fiber amplifiers, free-space LANs and so on.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117232816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hole confinement in strain-compensated-SQW (In/sub x/Ga/sub 1-x/As/GaAsP)/GaAs lasers 应变补偿- sqw (in /sub x/Ga/sub 1-x/As/GaAsP)/GaAs激光器的空穴约束
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI: 10.1109/ISLC.2000.882317
W. Susaki, K. Kondo, H. Yaku, H. Asano, T. Fukunaga, T. Hayakawa
{"title":"Hole confinement in strain-compensated-SQW (In/sub x/Ga/sub 1-x/As/GaAsP)/GaAs lasers","authors":"W. Susaki, K. Kondo, H. Yaku, H. Asano, T. Fukunaga, T. Hayakawa","doi":"10.1109/ISLC.2000.882317","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882317","url":null,"abstract":"The hole confinement at threshold on indium content in strain-compensated (In/sub x/Ga/sub 1-x/As/GaAs/sub 0.2/P/sub 0.8/)/GaAs SQW lasers is investigated by rate equation analysis of the lasing delay time. It is shown that the temperature insensitive threshold current in these lasers is due to complete hole confinement in HH (heavy hole) band due to larger energy difference between HH and LH (light hole) bands by the excellent strain-compensated configuration. The spontaneous recombination lifetime increases with x. A temperature insensitive lifetime (8.5 ns) is observed between 20 and 8/spl deg/C for x=0.3.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121944493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High single mode operation from hybrid ion implanted/selectively oxidized VCSELs 混合离子注入/选择性氧化VCSELs的高单模操作
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI: 10.1109/ISLC.2000.882287
K. Choquette, A. Fischer, K. Geib, G. R. Hadley, A. Allerman, J. J. Hindi
{"title":"High single mode operation from hybrid ion implanted/selectively oxidized VCSELs","authors":"K. Choquette, A. Fischer, K. Geib, G. R. Hadley, A. Allerman, J. J. Hindi","doi":"10.1109/ISLC.2000.882287","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882287","url":null,"abstract":"The modal discrimination can be augmented by creating a central region of gain surrounded by a region of optical loss. We report single mode output of more than 5 mW for 850 nm VCSELs fabricated using a hybrid ion implantation and selective oxidation device structure designed to achieve this end.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124265052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
183 nm tuning range in a grating-coupled external-cavity quantum dot laser 光栅耦合外腔量子点激光器的183nm调谐范围
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI: 10.1109/ISLC.2000.882325
P. Varangis, H. Li, G.T. Liu, T. Newell, A. Stintz, B. Fuchs, K. Malloy, L. Lester
{"title":"183 nm tuning range in a grating-coupled external-cavity quantum dot laser","authors":"P. Varangis, H. Li, G.T. Liu, T. Newell, A. Stintz, B. Fuchs, K. Malloy, L. Lester","doi":"10.1109/ISLC.2000.882325","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882325","url":null,"abstract":"We report on the 183 nm tuning range of an anti-reflection coated quantum dot (QD) laser using a diffraction grating in an external-cavity configuration. Over this range the laser threshold current density varied between 0.25 kA/cm/sup 2/ and 2.22 kA/cm/sup 2/ with an average value of 0.84 kA/cm/sup 2/. The laser active region is composed of a single InAs quantum dot layer confined in the middle of a 10-nm thick InGaAs quantum well and sandwiched by GaAs waveguide layers.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133317508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mid-IR broadened-waveguide and angled-grating distributed feedback (/spl alpha/-DFB) "W" quantum well lasers 中红外加宽波导和角光栅分布反馈(/spl alpha/-DFB)W量子阱激光器
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI: 10.1109/ISLC.2000.882321
W. Bewley, C. L. Felix, I. Vurgaftman, R. Bartolo, D. Stokes, M. Jurkovic, J. Lindle, J. R. Meyer, M. Yang, H. Lee, R. Menna, R. Martinelli, D. Garbuzov, J. Connolly, M. Maiorov, A. Sugg, G. Olsen
{"title":"Mid-IR broadened-waveguide and angled-grating distributed feedback (/spl alpha/-DFB) \"W\" quantum well lasers","authors":"W. Bewley, C. L. Felix, I. Vurgaftman, R. Bartolo, D. Stokes, M. Jurkovic, J. Lindle, J. R. Meyer, M. Yang, H. Lee, R. Menna, R. Martinelli, D. Garbuzov, J. Connolly, M. Maiorov, A. Sugg, G. Olsen","doi":"10.1109/ISLC.2000.882321","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882321","url":null,"abstract":"There is a growing demand for midwave-infrared (3-5 /spl mu/m) laser diodes operating in CW mode at non-cryogenic temperatures, for chemical sensing and other applications requiring low cost and portability. While optically-pumped mid-IR \"W\" lasers recently achieved CW operation up to 290 K, previous III-V diodes emitting beyond 3 /spl mu/m have never operated CW above 180 K. In the presentation we report progress toward the goal of thermoelectrically (TE) cooled operation by using antimonide type-II W quantum well (QW) diodes, and also high-power/high-brightness using optically-pumped angled-grating distributed feedback (/spl alpha/-DFB) lasers with W active regions. The InAs(l5/spl Aring/)/Ga/sub 0.75/In/sub 0.25/Sb(27/spl Aring/)/InAs(15/spl Aring/)/AlGaAsSb(80/spl Aring/) W diode active region is designed to rely on light holes for the interwell tunneling transport rather than heavy holes. Another key design element is the insertion of relatively thick (0.6 /spl mu/m-thick) undoped AlGaAsSb separate confinement heterostructure (SCH) layers on each side of the active region. By increasing the mode overlap with the waveguide core, this \"broadened waveguide\" configuration maximizes the optical confinement factor in the active region with 5 or 10 quantum wells while minimizing free-carrier absorption losses in the doped AlGaAsSb cladding layers.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130667611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analog modulation performance of red (670 nm) oxide confined VCSELs 红色(670 nm)氧化物受限VCSELs的模拟调制性能
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI: 10.1109/ISLC.2000.882267
C. Carlsson, H. Martinsson, J. Vukusic, J. Halonen, A. Larsson
{"title":"Analog modulation performance of red (670 nm) oxide confined VCSELs","authors":"C. Carlsson, H. Martinsson, J. Vukusic, J. Halonen, A. Larsson","doi":"10.1109/ISLC.2000.882267","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882267","url":null,"abstract":"Vertical cavity surface emitting lasers (VCSELs) are attractive for fiber optical distribution of RF-signals in cost sensitive applications such as intra-building antenna remoting in wireless networks. VCSELs emitting at 850 nm, together with low modal dispersion multimode fibers, are expected to provide adequate performance for such applications over distances of the order of 100 meters. VCSELs emitting at 650 nm, together with graded index plastic optical fiber (POF), may offer the ultimate low cost solution for shorter distance transmission of the analog signals. For this purpose we have fabricated GaAs-based oxide confined VCSELs with an InGaP/InGaAlP MQW active region for emission at 670 nm and characterized their analog modulation properties in the frequency range 0.1-3 GHz using two-tone measurements.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125574981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High single-mode yield 1.55 /spl mu/m GaInAsP/InP BH-DFB lasers with periodic wirelike active regions 具有周期性线状有源区的高单模产量1.55 /spl mu/m GaInAsP/InP BH-DFB激光器
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI: 10.1109/ISLC.2000.882280
N. Nunoya, M. Morshed, M. Nakamura, S. Tamura, S. Arai
{"title":"High single-mode yield 1.55 /spl mu/m GaInAsP/InP BH-DFB lasers with periodic wirelike active regions","authors":"N. Nunoya, M. Morshed, M. Nakamura, S. Tamura, S. Arai","doi":"10.1109/ISLC.2000.882280","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882280","url":null,"abstract":"We demonstrated low threshold current and stable single-mode operation of 1.55 μm wavelength GaInAsP-InP BH-DFB lasers with periodic wirelike active regions by adopting a gain-matching effect in strongly index-coupled structure.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115742286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Detuned grating multi-section-RW-DFB-lasers for high speed optical signal processing 用于高速光信号处理的失谐光栅多段rw - dfb激光器
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI: 10.1109/ISLC.2000.882328
M. Mohrle, B. Sartorius, S. Bauer, O. Brox, A. Sigmund, R. Steingruber, M. Radziunas, H. Wunsche
{"title":"Detuned grating multi-section-RW-DFB-lasers for high speed optical signal processing","authors":"M. Mohrle, B. Sartorius, S. Bauer, O. Brox, A. Sigmund, R. Steingruber, M. Radziunas, H. Wunsche","doi":"10.1109/ISLC.2000.882328","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882328","url":null,"abstract":"InGaAsP multisection-DFB-lasers with detuned gratings have been fabricated. Self-pulsation in the 40GHz range and the locking to data signals is demonstrated. Even higher self pulsation frequencies can be obtained based on the new concept.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131201923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 62
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