光栅耦合外腔量子点激光器的183nm调谐范围

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882325

P. Varangis, H. Li, G.T. Liu, T. Newell, A. Stintz, B. Fuchs, K. Malloy, L. Lester

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引用次数: 0

摘要

本文报道了采用外腔结构的衍射光栅的抗反射涂层量子点激光器的183nm调谐范围。在此范围内，激光阈值电流密度在0.25 kA/cm/sup 2/和2.22 kA/cm/sup 2/之间变化，平均值为0.84 kA/cm/sup 2/。激光活性区由单个InAs量子点层组成，该量子点层被限制在10 nm厚的InGaAs量子阱中间，并被GaAs波导层夹在中间。

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183 nm tuning range in a grating-coupled external-cavity quantum dot laser

We report on the 183 nm tuning range of an anti-reflection coated quantum dot (QD) laser using a diffraction grating in an external-cavity configuration. Over this range the laser threshold current density varied between 0.25 kA/cm/sup 2/ and 2.22 kA/cm/sup 2/ with an average value of 0.84 kA/cm/sup 2/. The laser active region is composed of a single InAs quantum dot layer confined in the middle of a 10-nm thick InGaAs quantum well and sandwiched by GaAs waveguide layers.

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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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