氧化物植入VCSELs的寄生特性及设计考虑

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882305

C. Chang, L. Chrostowski, C. Chang-Hasnain

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引用次数: 9

摘要

vcsel是光波通信系统中很有前途的高速发射机。目前使用的两种主要器件结构是氧化约束型和质子注入型VCSELs。前者由于氧化层薄而具有高电容，而后者由于注入面积小而具有高电阻。氧化物加植入体的VCSELs被证明具有bbb20 GHz调制带宽。然而，氧化物和植入物尺寸的设计规则和权衡及其对VCSEL调制响应的影响尚未明确显示。在本文中，我们在相同的样品上制备了纯氧化物和氧化物植入结构的VCSEL，并最终定量地表明，额外的植入过程提高了VCSEL的调制速度。提出了一种消除寄生限制的高速vcsel设计模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Parasitics and design considerations on oxide-implant VCSELs

VCSELs are promising high-speed transmitters in lightwave communication systems. Two major device structures used today are oxide-confined and proton-implanted VCSELs. The former has a high capacitance due to the thin oxide layer, whereas the latter has a high resistance due to a small injection area. Oxide plus implant VCSELs was demonstrated to have >20 GHz modulation bandwidth. However, the design rule and trade-off on oxide and implant dimensions and their impact on VCSEL's modulation response have not been clearly shown. In the paper, we fabricated VCSELs of oxide-only and oxide-implant structures on the same sample and show that, conclusively and quantitatively, the additional implant process increases VCSEL modulation speed. A model is proposed to design high-speed VCSELs by removing the parasitic limitation.

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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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