High single-mode yield 1.55 /spl mu/m GaInAsP/InP BH-DFB lasers with periodic wirelike active regions

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882280

N. Nunoya, M. Morshed, M. Nakamura, S. Tamura, S. Arai

引用次数: 2

Abstract

We demonstrated low threshold current and stable single-mode operation of 1.55 μm wavelength GaInAsP-InP BH-DFB lasers with periodic wirelike active regions by adopting a gain-matching effect in strongly index-coupled structure.

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具有周期性线状有源区的高单模产量1.55 /spl mu/m GaInAsP/InP BH-DFB激光器

我们在强折射率耦合结构中采用增益匹配效应，实现了1.55 μm波长GaInAsP-InP BH-DFB具有周期性线状有源区的低阈值电流和稳定的单模工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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