混合离子注入/选择性氧化VCSELs的高单模操作

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882287

K. Choquette, A. Fischer, K. Geib, G. R. Hadley, A. Allerman, J. J. Hindi

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引用次数: 20

摘要

模态鉴别可以通过创建被光损耗区域包围的增益中心区域来增强。我们报道了使用混合离子注入和选择性氧化装置结构制造的850 nm VCSELs的单模输出超过5 mW。

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High single mode operation from hybrid ion implanted/selectively oxidized VCSELs

The modal discrimination can be augmented by creating a central region of gain surrounded by a region of optical loss. We report single mode output of more than 5 mW for 850 nm VCSELs fabricated using a hybrid ion implantation and selective oxidation device structure designed to achieve this end.

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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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