Diodes with window-mirror structure

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882306

Z. Kawazu, Y. Tashiro, A. Shima, D. Suzuki, H. Nishiguchi, T. Yagi, E. Omura

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Abstract

The high power operation of the lateral mode stabilized 785nm AlGaAs LD with the window-mirror structure has been demonstrated. The stable lateral mode operation up to 250mW (kink level of 280 mW) is realized. To the best our knowledge, this is the highest power record among the narrow stripe LDs with a wavelength of 785 nm and is suitable for CD ROM disc drives.

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具有窗镜结构的二极管

证明了采用窗镜结构的785nm侧模稳定AlGaAs LD的高功率工作。实现了高达250mW(扭结水平为280mw)的稳定横向模式运行。据我们所知，这是波长为785 nm的窄条纹ld中最高的功率记录，适用于CD ROM光盘驱动器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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