Proceedings of 1993 IEEE International SOI Conference最新文献_第3页

Modelling of thin film SOI devices for circuit simulation including per-instance dynamic self-heating effects 薄膜SOI器件的电路仿真建模，包括每实例动态自热效应

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344556

M.S.L. Lee, W. Redman-White, B. Tenbroek, M. Robinson

引用次数: 12

Ultra-thin SOI MOSFETs at high temperature 高温超薄SOI mosfet

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344561

P. Karulkar

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引用次数: 6

An analysis of threshold voltage variation in thin-film SOI MOSFETs 薄膜SOI mosfet的阈值电压变化分析

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344578

S. Masui, M. Tachimori

引用次数: 1

Material properties of plasma-thinned bonded SOI wafers 等离子体薄化键合SOI晶圆的材料特性

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344591

T. Feng, M. Matloubian, D. Mathur, P.B. Mumola, G. Gardopee

引用次数: 1

Hot-carrier currents of SOI MOSFETs SOI mosfet的热载流子电流

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344568

H. Wann, J. King, Jian Chen, P. Ko, C. Hu

引用次数: 3

Independent control of wafer temperature and beam current on SIMOX material quality 独立控制晶圆温度和光束电流对SIMOX材料质量的影响

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344609

L. Allen, B. Cordts, W. Krull, J. Yap, T. Maung, J. Chung

引用次数: 1

Manufacturability considerations for fully depleted SOI 完全耗尽SOI的可制造性考虑

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344564

F. Brady, N. Haddad

引用次数: 3

Comparative materials characterization of SOI wafers produced by competing technologies 竞争技术生产的SOI晶圆的比较材料特性

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344603

D. Feijóo, A. Mills, A. Kortan, J. Sapjeta, C. Hsieh, G. Carver

引用次数: 1

Effect of single vs. multiple implant processing on defect types and densities in SIMOX 单种植体与多种植体处理对SIMOX缺陷类型和密度的影响

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344598

D. Venables, S. J. Krause, J.C. Park, J.D. Lee, P. Roitman

引用次数: 1

Successive charging/discharging of gate oxides in SOI MOSFETs by sequential hot electron stressing of front/back channel 利用前后通道顺序热电子应力对SOI mosfet栅极氧化物进行连续充放电

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344552

A. Zaleski, D. Ioannou, G. Campisi, H. Hughes

引用次数: 2