竞争技术生产的SOI晶圆的比较材料特性

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344603

D. Feijóo, A. Mills, A. Kortan, J. Sapjeta, C. Hsieh, G. Carver

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引用次数: 1

摘要

在这项工作中，我们使用了成熟的和新颖的分析技术来比较通过晶圆键合和不同的减薄技术(如化学-机械减薄、等离子体蚀刻和湿法蚀刻)以及通过植入氧分离(SIMOX)生产的SOI晶圆。所采用的技术包括光束诱导反射、正电子湮灭、原子力显微镜和x射线衍射。

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Comparative materials characterization of SOI wafers produced by competing technologies

In this work we have used established and novel analysis techniques to compare SOI wafers produced by wafer-bonding and different thinning techniques such as chemical-mechanical thinning, plasma etching and wet etching, and by separation-by-implanted-oxygen (SIMOX). The techniques employed were optical-beam-induced reflectance, positron annihilation, atomic force microscopy and X-ray diffractometry.<>

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Proceedings of 1993 IEEE International SOI Conference

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