An analysis of threshold voltage variation in thin-film SOI MOSFETs

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344578

S. Masui, M. Tachimori

引用次数: 1

Abstract

The statistical variation of the threshold voltage in SOI MOSFETs can be calculated using the probability distribution of the threshold voltage assuming that device parameters can be characterized with a Gaussian distribution. In order to evaluate the relative importance in device parameters and obtain the worst case analysis. however. it would be effective to express the variation in an analytical form. In this paper, we present analytical expressions of the threshold voltage variation for thin-film SOI and bulk MOSFETs, and discuss influences by SOI doping density N/sub SOI/ and SOI film thickness t/sub SOI/.<>

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薄膜SOI mosfet的阈值电压变化分析

假设器件参数符合高斯分布，利用阈值电压的概率分布可以计算出SOI mosfet中阈值电压的统计变化。为了评价各器件参数的相对重要性，得到最坏情况分析。然而。用解析形式来表示这种变化是有效的。本文给出了薄膜SOI和体mosfet阈值电压变化的解析表达式，并讨论了SOI掺杂密度N/sub SOI/和SOI薄膜厚度t/sub SOI/对阈值电压变化的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of 1993 IEEE International SOI Conference

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