Modelling of thin film SOI devices for circuit simulation including per-instance dynamic self-heating effects

Abstract

Circuit simulation models for thin-film silicon-on-insulator (SOI) MOSFETs have been available for some time. However, these do not take account of the increasingly important self-heating effects that have been widely reported. These effects can lead to a significant reduction in the drain current resulting in negative differential resistance (NDR) in the I/V characteristics of SOI devices. Moreover, recent work has shown that thermal self-heating can also affect transient and small-signal behaviour. Here, we describe the implementation of a model in the SPICE3 code which has been developed to include thermal effects as well as some of the other common characteristics observed in SOI devices. Results of trial simulations are then presented.<>