{"title":"利用前后通道顺序热电子应力对SOI mosfet栅极氧化物进行连续充放电","authors":"A. Zaleski, D. Ioannou, G. Campisi, H. Hughes","doi":"10.1109/SOI.1993.344552","DOIUrl":null,"url":null,"abstract":"The purpose of this work is to demonstrate that hot electron stressing one channel in a SOI MOSFET can in fact inject charges into the other channel, and it discusses two important applications of this phenomenon: namely, that it can be used as a new tool for the study of the mechanisms of degradation, and for designing erasing schemes for SOI based flash memories. The measurements were performed on partially and fully depleted SIMOX MOSFETs with LDD and channel lengths down to 0.6 /spl mu/m.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Successive charging/discharging of gate oxides in SOI MOSFETs by sequential hot electron stressing of front/back channel\",\"authors\":\"A. Zaleski, D. Ioannou, G. Campisi, H. Hughes\",\"doi\":\"10.1109/SOI.1993.344552\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The purpose of this work is to demonstrate that hot electron stressing one channel in a SOI MOSFET can in fact inject charges into the other channel, and it discusses two important applications of this phenomenon: namely, that it can be used as a new tool for the study of the mechanisms of degradation, and for designing erasing schemes for SOI based flash memories. The measurements were performed on partially and fully depleted SIMOX MOSFETs with LDD and channel lengths down to 0.6 /spl mu/m.<<ETX>>\",\"PeriodicalId\":308249,\"journal\":{\"name\":\"Proceedings of 1993 IEEE International SOI Conference\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1993 IEEE International SOI Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1993.344552\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344552","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Successive charging/discharging of gate oxides in SOI MOSFETs by sequential hot electron stressing of front/back channel
The purpose of this work is to demonstrate that hot electron stressing one channel in a SOI MOSFET can in fact inject charges into the other channel, and it discusses two important applications of this phenomenon: namely, that it can be used as a new tool for the study of the mechanisms of degradation, and for designing erasing schemes for SOI based flash memories. The measurements were performed on partially and fully depleted SIMOX MOSFETs with LDD and channel lengths down to 0.6 /spl mu/m.<>
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