{"title":"累积模式p沟道SOI mosfet的亚阈值斜率","authors":"J. Colinge, F. van de Wiele, D. Flandre","doi":"10.1109/SOI.1993.344558","DOIUrl":null,"url":null,"abstract":"There exists a well established model for the subthreshold slope of enhancement-mode MOSFETs. Indeed, the subthreshold slope is given by: S=kT/q ln10 (1+/spl alpha/) where /spl alpha/ is equal to the ratio C/sub bb//C/sub ox1/. In other words, /spl alpha/ is the ratio between the capacitance of the structure below the channel and that of the structure above it. C/sub bb/ is equal to C/sub depl/, C/sub si/ and (C/sub si/ in series with C/sub ox2/) in bulk, fully depleted (FD) SOI with back accumulation and fully depleted SOI devices, respectively. As the potential distribution in an accumulation-mode (AM) p-channel SOI MOSFET in the subthreshold regime is similar to that of an n-channel FD enhancement-mode (FDEM) device, the same analytical model can be used to determine S.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Subthreshold slope of accumulation-mode p-channel SOI MOSFETs\",\"authors\":\"J. Colinge, F. van de Wiele, D. Flandre\",\"doi\":\"10.1109/SOI.1993.344558\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There exists a well established model for the subthreshold slope of enhancement-mode MOSFETs. Indeed, the subthreshold slope is given by: S=kT/q ln10 (1+/spl alpha/) where /spl alpha/ is equal to the ratio C/sub bb//C/sub ox1/. In other words, /spl alpha/ is the ratio between the capacitance of the structure below the channel and that of the structure above it. C/sub bb/ is equal to C/sub depl/, C/sub si/ and (C/sub si/ in series with C/sub ox2/) in bulk, fully depleted (FD) SOI with back accumulation and fully depleted SOI devices, respectively. As the potential distribution in an accumulation-mode (AM) p-channel SOI MOSFET in the subthreshold regime is similar to that of an n-channel FD enhancement-mode (FDEM) device, the same analytical model can be used to determine S.<<ETX>>\",\"PeriodicalId\":308249,\"journal\":{\"name\":\"Proceedings of 1993 IEEE International SOI Conference\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1993 IEEE International SOI Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1993.344558\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344558","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Subthreshold slope of accumulation-mode p-channel SOI MOSFETs
There exists a well established model for the subthreshold slope of enhancement-mode MOSFETs. Indeed, the subthreshold slope is given by: S=kT/q ln10 (1+/spl alpha/) where /spl alpha/ is equal to the ratio C/sub bb//C/sub ox1/. In other words, /spl alpha/ is the ratio between the capacitance of the structure below the channel and that of the structure above it. C/sub bb/ is equal to C/sub depl/, C/sub si/ and (C/sub si/ in series with C/sub ox2/) in bulk, fully depleted (FD) SOI with back accumulation and fully depleted SOI devices, respectively. As the potential distribution in an accumulation-mode (AM) p-channel SOI MOSFET in the subthreshold regime is similar to that of an n-channel FD enhancement-mode (FDEM) device, the same analytical model can be used to determine S.<>
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