独立控制晶圆温度和光束电流对SIMOX材料质量的影响

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344609

L. Allen, B. Cordts, W. Krull, J. Yap, T. Maung, J. Chung

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引用次数: 1

摘要

我们提出了第一个实验的结果，研究了硅片温度在SIMOX植入过程中的影响，它与光束电流无关。结果表明，在较低的植入温度下，针孔密度降低，而在较高的植入温度下，位错密度和衬底/埋藏氧化物界面结构较好。

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Independent control of wafer temperature and beam current on SIMOX material quality

We present results of the first experiments investigating the effects of wafer temperature during the SIMOX implant which is independent of the beam current. The results show a decreased pinhole density at the lower implant temperature and better dislocation density and substrate/buried oxide interface structure at the higher temperature.<>

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Proceedings of 1993 IEEE International SOI Conference

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