2004 IEEE Workshop on Microelectronics and Electron Devices最新文献_第3页

Interaction effects of slurry chemistry on chemical mechanical planarization of electroplated copper 浆液化学相互作用对电镀铜化学机械平面化的影响

2004 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2004-09-27 DOI: 10.1109/WMED.2004.1297359

P. Miranda, J. A. Imonigie, A. Moll

引用次数: 3

Development of a micro-nozzle and ion mobility spectrometer in LTCC 微喷嘴及离子迁移谱仪的研制

2004 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2004-09-27 DOI: 10.1109/WMED.2004.1297362

D. Plumlee, J. Steciak, A. Moll

{"title":"Development of a micro-nozzle and ion mobility spectrometer in LTCC","authors":"D. Plumlee, J. Steciak, A. Moll","doi":"10.1109/WMED.2004.1297362","DOIUrl":"https://doi.org/10.1109/WMED.2004.1297362","url":null,"abstract":"Multilayer ceramic packaging materials provide a versatile platform to fabricate a wide variety of devices from sensors to micro-nozzles. Our research is focused on developing robust sensors for underground deployment and monopropellant micro nozzles for satellite attitude adjustment applications. An LTCC monopropellant micro-nozzle is being developed and tested to provide small thrust vectors for satellite attitude adjustments. High purity hydrogen peroxide undergoes a strong exothermic decomposition reaction in the presence of a silver catalyst. A micro-nozzle and catalyst chamber has been designed to convert hydrogen peroxide liquid to functional thrust. The device uses internal fluidic channels to direct the propellant to a silver lined catalyst chamber. The catalyst decomposes the propellant into water vapor and oxygen at temperatures near 1029 K. The hot gases are then expelled through a contoured nozzle to provide thrust. Complex internal geometric features are created using a CNC milling machine. An ion mobility spectrometer (IMS) is being developed for permanent deployment below ground to continuously analyze groundwater pollutants. Each segment was constructed of multiple layers of green tape. Five Kovar inserts were embedded in the device to function as ion gates. Reduction in size, hermeticity and system integration was made possible by the novel use of LTCC packaging technology.","PeriodicalId":296968,"journal":{"name":"2004 IEEE Workshop on Microelectronics and Electron Devices","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116745708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

CMOS imager technology shrinks and image performance CMOS成像技术缩小图像性能

2004 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2004-09-27 DOI: 10.1109/WMED.2004.1297338

Howard E. Rhodes, G. Agranov, C. Hong, U. Boettiger, R. Mauritzson, John Ladd, I. Karasev, Jeff A. Mckee, E. Jenkins, W. Quinlin, Inna Patrick, Jian Li, Xiaofeng Fan, R. Panicacci, S. Smith, Chandra Mouli, J. Bruce

{"title":"CMOS imager technology shrinks and image performance","authors":"Howard E. Rhodes, G. Agranov, C. Hong, U. Boettiger, R. Mauritzson, John Ladd, I. Karasev, Jeff A. Mckee, E. Jenkins, W. Quinlin, Inna Patrick, Jian Li, Xiaofeng Fan, R. Panicacci, S. Smith, Chandra Mouli, J. Bruce","doi":"10.1109/WMED.2004.1297338","DOIUrl":"https://doi.org/10.1109/WMED.2004.1297338","url":null,"abstract":"In this paper, we present a performance summary of CMOS imager pixels from 5.2 /spl mu/m to 4.2 /spl mu/m using 0.18 /spl mu/m imager design rules, then to 3.2 /spl mu/m using 0.15 /spl mu/m imager design rules. These pixels support 1.3-megapixel, 2.0-megapixel, and 3.1-megapixel CMOS image sensors for digital still cameral (DSC) applications at 3.3 V, respectively. The 4TC pixels are all based on technology shrinks of Micron's 2P3M imager process, and each of the technology nodes report excellent CMOS imager low-noise, high-sensitivity, low-lag, and low-light performance, matching that of state-of-the-art charged-coupled device (CCD) imagers. We have put a model in place to provide the predictive performance of smaller pixels, and then use that model to discuss performance expectations down to 2.0 /spl mu/m pixels. With the combination of imager design rules, pixel architecture, and process technology tailored for CMOS imagers, we see no fundamental reason that CMOS imagers should not be able to continue matching CCD performance as pixel sizes shrink.","PeriodicalId":296968,"journal":{"name":"2004 IEEE Workshop on Microelectronics and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129407074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 60

Clock and data recovery circuits with fast acquisition and low jitter 具有快速采集和低抖动的时钟和数据恢复电路

2004 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2004-09-27 DOI: 10.1109/WMED.2004.1297349

Ruiyuan Zhang, G. la Rue

引用次数: 6

Metal-insulator-Si (MIS) structure for advanced DRAM cell capacitor 先进DRAM电池电容器的金属-绝缘体-硅(MIS)结构

2004 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2004-09-27 DOI: 10.1109/WMED.2004.1297356

Lin Zheng, E. Ping

引用次数: 2

Through wafer interconnects on active pMOS devices 通过在有源pMOS器件上的晶圆互连

2004 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2004-09-27 DOI: 10.1109/WMED.2004.1297358

V. Johnson, J. Jozwiak, A. Moll

引用次数: 10

A low-power low-noise sensor IC 一种低功耗低噪声传感器集成电路

2004 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2004-09-27 DOI: 10.1109/WMED.2004.1297352

Haidong Guo, C.L. Champion, D. Rector, G. la Rue

引用次数: 3

Simulation of the exclusion/extraction InSb MOSFETs 排除/提取InSb mosfet的仿真

2004 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2004-09-27 DOI: 10.1109/WMED.2004.1297354

E. Sijercic, K. Mueller, B. Pejcinovic

引用次数: 2

Design of a pipelined adder using skew tolerant domino logic in a 0.35 /spl mu/m TSMC process 在0.35 /spl mu/m台积电制程中，使用容许偏差的多米诺逻辑设计流水线加法器

2004 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2004-09-27 DOI: 10.1109/WMED.2004.1297351

V. Sukumar, D. Pan, K. Buck, H. Hess, H. Li, D. Cox, M. Mojarradi

引用次数: 5

Elimination of body effects in SOI CMOS devices 消除SOI CMOS器件中的体效应

2004 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2004-09-27 DOI: 10.1109/WMED.2004.1297373

S. Pemmaraju, S. Parke

引用次数: 3