{"title":"排除/提取InSb mosfet的仿真","authors":"E. Sijercic, K. Mueller, B. Pejcinovic","doi":"10.1109/WMED.2004.1297354","DOIUrl":null,"url":null,"abstract":"A methodology for simulation of InSb MOSFETs in standard drift-diffusion simulators is presented. Due to its low bandgap and high mobility, InSb shows promise as a material for extremely high frequency active devices operating at very low voltages. Material complexities, such as non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained, and physics based models are developed. This methodology is then applied to the examination of the leakage current, transconductance and maximum unity current gain frequency of the exclusion/extraction MOSFET. Its scaling properties down to 0.15 /spl mu/m are also analyzed.","PeriodicalId":296968,"journal":{"name":"2004 IEEE Workshop on Microelectronics and Electron Devices","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Simulation of the exclusion/extraction InSb MOSFETs\",\"authors\":\"E. Sijercic, K. Mueller, B. Pejcinovic\",\"doi\":\"10.1109/WMED.2004.1297354\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A methodology for simulation of InSb MOSFETs in standard drift-diffusion simulators is presented. Due to its low bandgap and high mobility, InSb shows promise as a material for extremely high frequency active devices operating at very low voltages. Material complexities, such as non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained, and physics based models are developed. This methodology is then applied to the examination of the leakage current, transconductance and maximum unity current gain frequency of the exclusion/extraction MOSFET. Its scaling properties down to 0.15 /spl mu/m are also analyzed.\",\"PeriodicalId\":296968,\"journal\":{\"name\":\"2004 IEEE Workshop on Microelectronics and Electron Devices\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE Workshop on Microelectronics and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WMED.2004.1297354\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE Workshop on Microelectronics and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WMED.2004.1297354","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation of the exclusion/extraction InSb MOSFETs
A methodology for simulation of InSb MOSFETs in standard drift-diffusion simulators is presented. Due to its low bandgap and high mobility, InSb shows promise as a material for extremely high frequency active devices operating at very low voltages. Material complexities, such as non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained, and physics based models are developed. This methodology is then applied to the examination of the leakage current, transconductance and maximum unity current gain frequency of the exclusion/extraction MOSFET. Its scaling properties down to 0.15 /spl mu/m are also analyzed.
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