{"title":"Clock and data recovery circuits with fast acquisition and low jitter","authors":"Ruiyuan Zhang, G. la Rue","doi":"10.1109/WMED.2004.1297349","DOIUrl":null,"url":null,"abstract":"This paper presents a half-rate clock and data recovery circuit (CDR) that combines the best features, fast acquisition and low jitter, of digital phase selection and phase-lock-loop (PLL) CDR circuits. This CDR circuit consists of a phase selector, which can lock to the data in just a few clock cycles but has high jitter, and a PLL, which requires a much longer lock time but provides a low-jitter clock after locking. Fabricated in a 0.5 /spl mu/m CMOS process, the combined CDR achieves operation up to 750 Mbps. Measurements show at least a 6% acquisition range, an initial acquisition time of 8 bit times with jitter of 30% bit time, and jitter of 16 ps at 688 Mbps after a PLL lock time of 700 ns. Power dissipation is 300 mW and die area is 1.4 /spl times/ 1.4 mm/sup 2/.","PeriodicalId":296968,"journal":{"name":"2004 IEEE Workshop on Microelectronics and Electron Devices","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE Workshop on Microelectronics and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WMED.2004.1297349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper presents a half-rate clock and data recovery circuit (CDR) that combines the best features, fast acquisition and low jitter, of digital phase selection and phase-lock-loop (PLL) CDR circuits. This CDR circuit consists of a phase selector, which can lock to the data in just a few clock cycles but has high jitter, and a PLL, which requires a much longer lock time but provides a low-jitter clock after locking. Fabricated in a 0.5 /spl mu/m CMOS process, the combined CDR achieves operation up to 750 Mbps. Measurements show at least a 6% acquisition range, an initial acquisition time of 8 bit times with jitter of 30% bit time, and jitter of 16 ps at 688 Mbps after a PLL lock time of 700 ns. Power dissipation is 300 mW and die area is 1.4 /spl times/ 1.4 mm/sup 2/.