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2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)最新文献

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Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns 多指栅图AlGaN/GaN hemt的击穿降解
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521699
T. Yamazaki, Y. Suzuki, S. Ohi, J. Asubar, H. Tokuda, M. Kuzuhara
{"title":"Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns","authors":"T. Yamazaki, Y. Suzuki, S. Ohi, J. Asubar, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2016.7521699","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521699","url":null,"abstract":"This paper describes breakdown characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with multi-finger gate patterns. We studied the spatial profile of electroluminescence (EL) from AlGaN/GaN HEMTs under high drain and near pinch-off gate bias. As a result, different EL emission profiles and breakdown characteristics were observed depending on the drain electrode pattern of the devices.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132624165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High power efficient and scalable noise-shaping SAR ADC for IoT sensors 用于物联网传感器的高功率高效和可扩展噪声整形SAR ADC
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521664
Y. Tsukamoto, Koji Obata, Kazuo Matsukawa, K. Sushihara
{"title":"High power efficient and scalable noise-shaping SAR ADC for IoT sensors","authors":"Y. Tsukamoto, Koji Obata, Kazuo Matsukawa, K. Sushihara","doi":"10.1109/IMFEDK.2016.7521664","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521664","url":null,"abstract":"A high power efficient and scalable noise-shaping SAR ADC was fabricated in 28 nm CMOS process. By integrating residue of 12 bit SAR AD conversion with 3rd order integrator, Σ modulation is achieved and noise floor of AD conversion is shaped. 97.99 dB SNDR and 111.8 dB SFDR for 2 kHz bandwidth with only 37.1 μW power consumption is measured. By increasing sampling frequency, the performance of the ADC is changed to 93.95 dB SNDR and 108.0 SFDR for 20 kHz bandwidth with 493.1 μW power consumption.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116317211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Effects of layered CdTe nano particles on Si solar cells 层状CdTe纳米颗粒对硅太阳能电池的影响
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521707
T. Ogawa, J. Liang, S. Imasaki, T. Watanabe, D. Kim, N. Shigekawa
{"title":"Effects of layered CdTe nano particles on Si solar cells","authors":"T. Ogawa, J. Liang, S. Imasaki, T. Watanabe, D. Kim, N. Shigekawa","doi":"10.1109/IMFEDK.2016.7521707","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521707","url":null,"abstract":"Layered CdTe nanoparticles were deposited on surfaces of n-on-p crystalline Si solar cells. Their short-circuit current and conversion efficiency were enhanced due to the nanoparticle deposition. Measurements of reflectance and external-quantum-efficiency spectra as well as atomic-force-microscope observations implied that the enhancements in cell performances were attributable to textured structures of the deposited nanoparticle layers.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126120008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impact of air exposure on physical properties of sputter-deposited undoped ZnO films 空气暴露对溅射沉积未掺杂ZnO薄膜物理性能的影响
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521679
N. Takahashi, J. Zhang, Y. Omura, T. Saitoh
{"title":"Impact of air exposure on physical properties of sputter-deposited undoped ZnO films","authors":"N. Takahashi, J. Zhang, Y. Omura, T. Saitoh","doi":"10.1109/IMFEDK.2016.7521679","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521679","url":null,"abstract":"This paper demonstrates the impact of exposing undoped ZnO films to the air. Lateral resistance of ZnO films annealed in O2 ambient increases with the time spent and then decreases at over one hundreds hours, while that of ZnO films annealed in N2 ambient is almost insensitive to such exposure.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125532883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Sensitivity of resistive transition of sputter-deposited TiO2 films to electrode material 溅射沉积TiO2薄膜电阻跃迁对电极材料的敏感性
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521687
N. Kawashima, Shingo Sato, Y. Omura
{"title":"Sensitivity of resistive transition of sputter-deposited TiO2 films to electrode material","authors":"N. Kawashima, Shingo Sato, Y. Omura","doi":"10.1109/IMFEDK.2016.7521687","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521687","url":null,"abstract":"This paper discusses the influence of top-electrode (TE) and bottom-electrode (BE) materials on the resistive transition of sputter-deposited TiO2 films. The electronic characteristics of the TiO2 films are elucidated from the physical mechanism of resistive transition.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125051759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of ultra-high-speed image sensor based on drift-diffusion model 基于漂移-扩散模型的超高速图像传感器分析
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521668
L. T. Yen, N. Minamitani, Y. Kamakura, T. Etoh
{"title":"Analysis of ultra-high-speed image sensor based on drift-diffusion model","authors":"L. T. Yen, N. Minamitani, Y. Kamakura, T. Etoh","doi":"10.1109/IMFEDK.2016.7521668","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521668","url":null,"abstract":"Electron travel time distribution in the backside illuminated in-situ storage image sensor (BSI ISIS) is analyzed based on the drift diffusion model coupled with the light-absorption model. Dependence of the variation on the various device design parameters and physical conditions is discussed. It is shown that the ultimate highest frame rate is dependent on the light absorption coefficient.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"434 20","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133323371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tamper resistance of IoT devices against electromagnnetic analysis 物联网设备对电磁分析的抗篡改能力
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521692
Y. Nozaki, Y. Ikezaki, M. Yoshikawa
{"title":"Tamper resistance of IoT devices against electromagnnetic analysis","authors":"Y. Nozaki, Y. Ikezaki, M. Yoshikawa","doi":"10.1109/IMFEDK.2016.7521692","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521692","url":null,"abstract":"Lightweight block ciphers, which are required for IoT devices, have attracted attention. Simeck, which is one of the most popular lightweight block ciphers, can be implemented on IoT devices in the smallest area. Regarding the hardware security, the threat of electromagnetic analysis has been reported. However, electromagnetic analysis of Simeck has not been reported. Therefore, this study proposes a dedicated electromagnetic analysis for a lightweight block cipher Simeck to ensure the safety of IoT devices in the future. To our knowledge, this is the first electromagnetic analysis for Simeck. Experiments using a FPGA prove the validity of the proposed method.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"39 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120868443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Quest for visual system of the brain to create artificial vision 探索大脑的视觉系统来创造人工视觉
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521660
T. Yagi
{"title":"Quest for visual system of the brain to create artificial vision","authors":"T. Yagi","doi":"10.1109/IMFEDK.2016.7521660","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521660","url":null,"abstract":"The neuromorphic retina is a very large scale integrated (VLSI) circuit whose structure and function are designed to mimic those of retinal neuronal network. We have developed a neuromorphic retina model to study the function of retinal circuits in natural visual environment. The model consists of analog VLSI circuit and Field Programmable Gate Array (FPGA), enabling to reproduce responses of major types of retinal neuron in real time. Using the neuromorphic retina, we conducted “virtual in vivo experiments” in which neuronal images of retinal neurons responding to natural scenes are reproduced in real time. We also applied the neuromorphic retina to robotic vision and visual prosthetics. The neuromorphic device and system provide a novel methodology to advance research not only in electronic engineering but also in neuroscience.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120935259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrochromic properties of single-crystalline tungsten trioxide films grown by molecular beam epitaxy 分子束外延生长单晶三氧化钨薄膜的电致变色特性
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521686
T. Murayama, Wataru Kuwagata, K. Koike, Y. Harada, S. Sasa, M. Yano, Shintaro Kobayashi, K. Inaba
{"title":"Electrochromic properties of single-crystalline tungsten trioxide films grown by molecular beam epitaxy","authors":"T. Murayama, Wataru Kuwagata, K. Koike, Y. Harada, S. Sasa, M. Yano, Shintaro Kobayashi, K. Inaba","doi":"10.1109/IMFEDK.2016.7521686","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521686","url":null,"abstract":"C-axis oriented single-crystalline monoclinic WO3 films were grown by molecular beam epitaxy, and studied their properties by fabricating solution-gate electrochromic devices in H2SO4 aqueous solution. These devices exhibited reversible change in the following three states; a colored state with low electrical resistivity after biasing a positive gate voltage, a transparent state with low electrical resistivity after biasing a negative gate voltage, and another transparent state with high electrical resistivity after thermal annealing. At the former two states, the c-axis length of the monoclinic WO3 films was found to expand slightly compared with that of the latter state after annealing. These results were consistently explained in terms of the protonation and hydration of WO3.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115494161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation and fabrication of test structure for micro-wall solar cell with electric-field effect 电场效应微壁太阳能电池测试结构的模拟与制作
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521706
T. Kusakabe, N. Matsuo, A. Heya
{"title":"Simulation and fabrication of test structure for micro-wall solar cell with electric-field effect","authors":"T. Kusakabe, N. Matsuo, A. Heya","doi":"10.1109/IMFEDK.2016.7521706","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521706","url":null,"abstract":"The energy loss of solar cell due to the recombination of holes and electrons which are excited by the incident solar beam is approximately 20% of all the loss-mechanisms. We simulated the solar cell with Metal-Insulator-Semiconductor (MIS) structure and fabricated the MIS solar cell using the Silicon-on-Insulator (SOI) substrate. Back gate bias restrains the recombination of holes and electrons, therefore, the carrier life time is extended and the conversion efficiency is improved by the electric field effect in the power generation layer. It was clarified that the conversion efficiency with a gate bias of 2.5V was increased 50 times larger than that without it.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116671775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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