多指栅图AlGaN/GaN hemt的击穿降解

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI:10.1109/IMFEDK.2016.7521699

T. Yamazaki, Y. Suzuki, S. Ohi, J. Asubar, H. Tokuda, M. Kuzuhara

{"title":"多指栅图AlGaN/GaN hemt的击穿降解","authors":"T. Yamazaki, Y. Suzuki, S. Ohi, J. Asubar, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2016.7521699","DOIUrl":null,"url":null,"abstract":"This paper describes breakdown characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with multi-finger gate patterns. We studied the spatial profile of electroluminescence (EL) from AlGaN/GaN HEMTs under high drain and near pinch-off gate bias. As a result, different EL emission profiles and breakdown characteristics were observed depending on the drain electrode pattern of the devices.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns\",\"authors\":\"T. Yamazaki, Y. Suzuki, S. Ohi, J. Asubar, H. Tokuda, M. Kuzuhara\",\"doi\":\"10.1109/IMFEDK.2016.7521699\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes breakdown characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with multi-finger gate patterns. We studied the spatial profile of electroluminescence (EL) from AlGaN/GaN HEMTs under high drain and near pinch-off gate bias. As a result, different EL emission profiles and breakdown characteristics were observed depending on the drain electrode pattern of the devices.\",\"PeriodicalId\":293371,\"journal\":{\"name\":\"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"98 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2016.7521699\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2016.7521699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文研究了具有多指栅结构的AlGaN/GaN高电子迁移率晶体管的击穿特性。研究了高漏极和近掐断栅极偏压下AlGaN/GaN HEMTs的电致发光空间分布。因此，根据器件的漏极模式，观察到不同的EL发射曲线和击穿特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns

This paper describes breakdown characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with multi-finger gate patterns. We studied the spatial profile of electroluminescence (EL) from AlGaN/GaN HEMTs under high drain and near pinch-off gate bias. As a result, different EL emission profiles and breakdown characteristics were observed depending on the drain electrode pattern of the devices.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

自引率

0.00%

发文量