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2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)最新文献

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IoT device oriented security module using PUF 面向物联网设备的安全模块，使用PUF
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-07-28 DOI: 10.1109/IMFEDK.2016.7521693
Y. Ikezaki, Y. Nozaki, M. Yoshikawa
{"title":"IoT device oriented security module using PUF","authors":"Y. Ikezaki, Y. Nozaki, M. Yoshikawa","doi":"10.1109/IMFEDK.2016.7521693","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521693","url":null,"abstract":"Physical Unclonable Function (PUF) is attracted attention as a countermeasure for imitation electronics. PUF makes unique IDs using the variations when LSI manufacturing. On the other hand, lightweight block ciphers are proposed as security module for IoT devices. This study verifies the feasibility of security module using a lightweight block cipher (TWINE) and PUF.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116360206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of metal electrode edge irregularities on breakdown voltages of AlGaN/GaN HEMTs 金属电极边缘不规则性对AlGaN/GaN hemt击穿电压的影响
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521698
S. Makino, S. Ohi, J. Asubar, H. Tokuda, M. Kuzuhara
{"title":"Effect of metal electrode edge irregularities on breakdown voltages of AlGaN/GaN HEMTs","authors":"S. Makino, S. Ohi, J. Asubar, H. Tokuda, M. Kuzuhara","doi":"10.1109/IMFEDK.2016.7521698","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521698","url":null,"abstract":"The purpose of this work is to investigate the effect of ohmic electrode processing on the breakdown voltage of AlGaN/GaN HEMTs. The impact of ultrasonic cleaning condition during the lift-off process on metal edge definition was investigated. It was verified that the shape of the ohmic electrode was indeed crucial for ensuring high breakdown voltage characteristics.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126548966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characteristic reliability of a hybrid-type temperature sensor using poly-Si thin-film transistors 采用多晶硅薄膜晶体管的混合型温度传感器的特性可靠性
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521670
Toshimasa Hori, J. Taya, Hisashi Hayashi, T. Matsuda, M. Kimura
{"title":"Characteristic reliability of a hybrid-type temperature sensor using poly-Si thin-film transistors","authors":"Toshimasa Hori, J. Taya, Hisashi Hayashi, T. Matsuda, M. Kimura","doi":"10.1109/IMFEDK.2016.7521670","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521670","url":null,"abstract":"We are developing hybrid-type temperature sensors using poly-Si thin-film transistors (TFTs). In this study, first, we evaluate the characteristic change of the off-leakage current of the TFT by changing the temperature several times. It is found that there is no historical effect even if the temperature changes very much. Next, we evaluate that by applying the actual driving condition. It is found that the valid evaluation can be obtained only by considering the pulse voltage bias. Finally, we evaluate the characteristic change of the oscillation frequency of the hybrid-type temperature sensor. It is found that the oscillation frequency increases along the time. It is thought that the change of the oscillation frequency can be explained by the characteristic change of the off-leakage current of the TFT by applying the actual driving condition.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130714531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Potential of perovskite solar cells for power sources of IoT applications 钙钛矿太阳能电池在物联网应用电源中的潜力
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521704
Itaru Raifuku, Y. Ishikawa, Y. Uraoka, S. Ito
{"title":"Potential of perovskite solar cells for power sources of IoT applications","authors":"Itaru Raifuku, Y. Ishikawa, Y. Uraoka, S. Ito","doi":"10.1109/IMFEDK.2016.7521704","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521704","url":null,"abstract":"In this study, we investigated the characteristics of perovskite solar cells under low illuminant conditions. The open-circuit voltage remained around 80% at 0.1% illuminance of AM1.5. Moreover, spectral sensitivity of perovskite solar cells did not show dependence for light intensity. These results indicate the potential of perovskite solar cells for power sources of IoT applications.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115381672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 1.8/2.6 GHz CMOS high linearity power amplifier for LTE application 一种用于LTE应用的1.8/2.6 GHz CMOS高线性功率放大器
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521678
Chih-huang Lin, Jeng-Rern Yang
{"title":"A 1.8/2.6 GHz CMOS high linearity power amplifier for LTE application","authors":"Chih-huang Lin, Jeng-Rern Yang","doi":"10.1109/IMFEDK.2016.7521678","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521678","url":null,"abstract":"This paper presents a CMOS high linearity power amplifier for LTE application. We use inverter circuits and t second harmonic control to improve the linearity. This circuit will be processed with TSMC 0.18 μm technology. The simulation result shows that the circuit exhibited a power gain of 25.9 dB, an input return loss less than - 20.2/20.9dB, the PAE is about 35%/31.2% and the output power is about 21.6/18.2 dBm at 1.8/2.6GHz. The power consumption is 378mW at voltage of 3.3V.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115576227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Artificial neural networks using poly-Si thin-film transistors 利用多晶硅薄膜晶体管的人工神经网络
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521689
Sumio Sugisaki, Ryohei Morita, Yuki Yamaguchi, T. Matsuda, M. Kimura
{"title":"Artificial neural networks using poly-Si thin-film transistors","authors":"Sumio Sugisaki, Ryohei Morita, Yuki Yamaguchi, T. Matsuda, M. Kimura","doi":"10.1109/IMFEDK.2016.7521689","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521689","url":null,"abstract":"We are developing neural networks using thin-film transistors (TFTs). By adopting an interconnect-type neural network and utilizing a characteristic degradation of poly-Si TFTs as a variable strength of synapse connection, which was originally an issue, we realized the neuron consisting of eight TFTs and synapse of only one TFT. Particularly in this presentation, we confirmed that the learning efficiency can be improved by gradually increasing the control voltage. This is a result leading to a robust and tolerant system in real situation.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117226108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of inversion layer electron density of InGaAs MOSFETs InGaAs mosfet反转层电子密度分析
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521683
Taiki Fujimoto, A. Hiroki, T. Katano
{"title":"Analysis of inversion layer electron density of InGaAs MOSFETs","authors":"Taiki Fujimoto, A. Hiroki, T. Katano","doi":"10.1109/IMFEDK.2016.7521683","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521683","url":null,"abstract":"This paper investigates the electron density distributions in the inversion layer of Ta gate, Al2O3 insulator and InGaAs substrate MOSFETs. Schrödinger/ Poisson model is used to analyze the quantum effects of the inversion layer. The electron density distributions of InGaAs MOSFETs are compared with those of Si MOSFETs. It is found that the low electron effective mass of InGaAs substrate leads to higher energy of the subbands and the broadening of the electron density in the inversion layer.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"222 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121957608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of Ar beam irradiation on Si-based Schottky contacts 氩束辐照对si基肖特基触点的影响
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521671
S. Hisamoto, J. Liang, N. Shigekawa
{"title":"Effects of Ar beam irradiation on Si-based Schottky contacts","authors":"S. Hisamoto, J. Liang, N. Shigekawa","doi":"10.1109/IMFEDK.2016.7521671","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521671","url":null,"abstract":"Effects of Ar beam irradiated during the surface-activated bonding process on n-Si and p-Si based Schottky barrier diodes (SBDs) were investigated by atomic force microscope measurements. Charges in the electrical characteristics of SBDs were attributed to the variation in Schottky barrier heights due to the Ar beam irradiation.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132493648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Evaluation of initial electron distributions in ensemble Monte Carlo simulations 集合蒙特卡罗模拟中初始电子分布的评估
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521675
Shin Hiratoko, A. Hiroki, N. Fujimoto
{"title":"Evaluation of initial electron distributions in ensemble Monte Carlo simulations","authors":"Shin Hiratoko, A. Hiroki, N. Fujimoto","doi":"10.1109/IMFEDK.2016.7521675","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521675","url":null,"abstract":"This paper describes an evaluation of the initial electron distributions in ensemble Monte Carlo simulations. The initial electron distribution calculated by using the commonly used approximation expression is compared with the Maxwell distribution. The distribution using the approximation expression shows lower peak than that using the Maxwell distribution. It is found that the approximation expression leads to the broad initial electron distribution.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116146884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characteristic evaluation of Ga-Sn-O thin films fabricated using RF magnetron sputtering 射频磁控溅射制备Ga-Sn-O薄膜的特性评价
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521680
Yuta Kato, K. Umeda, Daiki Nishimoto, T. Matsuda, M. Kimura
{"title":"Characteristic evaluation of Ga-Sn-O thin films fabricated using RF magnetron sputtering","authors":"Yuta Kato, K. Umeda, Daiki Nishimoto, T. Matsuda, M. Kimura","doi":"10.1109/IMFEDK.2016.7521680","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521680","url":null,"abstract":"We have evaluated characteristics of Ga-Sn-O (GTO) thin films deposited by RF magnetron sputtering with changing composition ratios of sputtering targets and deposition pressure. The optical transmittance is more than 80%, and the sheet resistance decreases as the deposition pressure increase for the thin films for Ga:Sn=3:1, On the other hand, for the thin films for Ga:Sn=3:1, both the transmittance and sheet resistance decreases as the deposition pressure increases. We analyze the composition ratio and find that for the thin films for Ga:Sn=3:1, the composition ratios in the thin films are similar to that in the sputtering target, whereas for the thin films for Ga:Sn=3:1, the composition ratios in the thin films change as the deposition pressure changes, namely, the ratio of Ga decreases and the ratio of Sn increases as the deposition pressure increases. It is expected that GTO thin films are utilized for future device applications by controlling the composition ratios of Ga and Sn and deposition conditions.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123849017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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