Characteristic evaluation of Ga-Sn-O thin films fabricated using RF magnetron sputtering

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI:10.1109/IMFEDK.2016.7521680

Yuta Kato, K. Umeda, Daiki Nishimoto, T. Matsuda, M. Kimura

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Abstract

We have evaluated characteristics of Ga-Sn-O (GTO) thin films deposited by RF magnetron sputtering with changing composition ratios of sputtering targets and deposition pressure. The optical transmittance is more than 80%, and the sheet resistance decreases as the deposition pressure increase for the thin films for Ga:Sn=3:1, On the other hand, for the thin films for Ga:Sn=3:1, both the transmittance and sheet resistance decreases as the deposition pressure increases. We analyze the composition ratio and find that for the thin films for Ga:Sn=3:1, the composition ratios in the thin films are similar to that in the sputtering target, whereas for the thin films for Ga:Sn=3:1, the composition ratios in the thin films change as the deposition pressure changes, namely, the ratio of Ga decreases and the ratio of Sn increases as the deposition pressure increases. It is expected that GTO thin films are utilized for future device applications by controlling the composition ratios of Ga and Sn and deposition conditions.

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射频磁控溅射制备Ga-Sn-O薄膜的特性评价

研究了射频磁控溅射制备的Ga-Sn-O (GTO)薄膜在溅射靶组成比和溅射压力变化下的特性。对于Ga:Sn=3:1的薄膜，随着沉积压力的增加，透光率大于80%，片阻减小;而对于Ga:Sn=3:1的薄膜，随着沉积压力的增加，透光率和片阻均减小。我们分析了组成比，发现对于Ga:Sn=3:1的薄膜，薄膜中的组成比与溅射靶中的组成比相似，而对于Ga:Sn=3:1的薄膜，薄膜中的组成比随着沉积压力的变化而变化，即随着沉积压力的增加，Ga的比例减小，Sn的比例增大。通过控制Ga和Sn的组成比和沉积条件，有望将GTO薄膜用于未来的器件应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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