Effects of Ar beam irradiation on Si-based Schottky contacts

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI:10.1109/IMFEDK.2016.7521671

S. Hisamoto, J. Liang, N. Shigekawa

引用次数: 3

Abstract

Effects of Ar beam irradiated during the surface-activated bonding process on n-Si and p-Si based Schottky barrier diodes (SBDs) were investigated by atomic force microscope measurements. Charges in the electrical characteristics of SBDs were attributed to the variation in Schottky barrier heights due to the Ar beam irradiation.

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氩束辐照对si基肖特基触点的影响

用原子力显微镜研究了表面激活键合过程中辐照Ar束对n-Si和p-Si基肖特基势垒二极管(sdd)的影响。sdd电学特性中的电荷归因于氩束辐照引起的肖特基势垒高度的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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