InGaAs mosfet反转层电子密度分析

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI:10.1109/IMFEDK.2016.7521683

Taiki Fujimoto, A. Hiroki, T. Katano

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引用次数: 0

摘要

本文研究了Ta栅极、Al2O3绝缘体和InGaAs衬底mosfet反转层中的电子密度分布。利用Schrödinger/泊松模型分析反转层的量子效应。比较了InGaAs mosfet与Si mosfet的电子密度分布。研究发现，InGaAs衬底的电子有效质量较低，导致子带能量较高，反转层的电子密度展宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of inversion layer electron density of InGaAs MOSFETs

This paper investigates the electron density distributions in the inversion layer of Ta gate, Al2O3 insulator and InGaAs substrate MOSFETs. Schrödinger/ Poisson model is used to analyze the quantum effects of the inversion layer. The electron density distributions of InGaAs MOSFETs are compared with those of Si MOSFETs. It is found that the low electron effective mass of InGaAs substrate leads to higher energy of the subbands and the broadening of the electron density in the inversion layer.

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2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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