金属电极边缘不规则性对AlGaN/GaN hemt击穿电压的影响

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI:10.1109/IMFEDK.2016.7521698

S. Makino, S. Ohi, J. Asubar, H. Tokuda, M. Kuzuhara

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引用次数: 1

摘要

本文的目的是研究欧姆电极处理对AlGaN/GaN hemt击穿电压的影响。研究了提离过程中超声波清洗条件对金属边缘清晰度的影响。验证了欧姆电极的形状对于确保高击穿电压特性确实至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of metal electrode edge irregularities on breakdown voltages of AlGaN/GaN HEMTs

The purpose of this work is to investigate the effect of ohmic electrode processing on the breakdown voltage of AlGaN/GaN HEMTs. The impact of ultrasonic cleaning condition during the lift-off process on metal edge definition was investigated. It was verified that the shape of the ohmic electrode was indeed crucial for ensuring high breakdown voltage characteristics.

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来源期刊

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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