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2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)最新文献

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Analysis of the SOG film crack mechanism for TEOS/SOG/TEOS structure TEOS/SOG/TEOS结构SOG膜裂纹机理分析
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521665
T. Naoe, T. Fujimoto, M. Miyata, Takuya Takahashi
{"title":"Analysis of the SOG film crack mechanism for TEOS/SOG/TEOS structure","authors":"T. Naoe, T. Fujimoto, M. Miyata, Takuya Takahashi","doi":"10.1109/IMFEDK.2016.7521665","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521665","url":null,"abstract":"In the multilevel interconnection process using the TEOS / SOG/ TEOS films planarization technology, the low refractive index TEOS film and the upper the Metal line layout have much affect the internal SOG film crack. Existence of the large area upper Metal line is indispensable for the occurrence of the SOG film crack, because it has residual high tensile stress. Furthermore, when the refractive index of the upper layer TEOS film which interfaced with the upper Metal line is decrease, the compression stress is also decrease. It is thought that these complex factors induce the SOG film crack and the TEOS film itself crack.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126362537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of top electrodes to vibration modes in impulse responses of MEMS piezoelectric diaphragms for ultrasonic microsensors 顶电极对超声微传感器MEMS压电膜片脉冲响应振动模式的影响
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521705
Tomoki Nishioka, Taiki Nishiumi, K. Yamashita, M. Noda
{"title":"Influence of top electrodes to vibration modes in impulse responses of MEMS piezoelectric diaphragms for ultrasonic microsensors","authors":"Tomoki Nishioka, Taiki Nishiumi, K. Yamashita, M. Noda","doi":"10.1109/IMFEDK.2016.7521705","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521705","url":null,"abstract":"Vibration modes of MEMS diaphragms were investigated in piezoelectric ultrasonic microsensors from the viewpoint of how their top electrodes affect the vibrations caused by an airborne ultrasound pulse. The top electrode of the sensors is divided into two parts for ultrasonic sensing and resonant frequency tuning to utilize them for a high resolution measurement technique which uses two resonant frequencies. The vibration modes of the sensor diaphragms having the divided electrode with various thickness were evaluated using scanning laser Doppler vibrometry. The top electrode strongly affected the vibration mode even in the thickness around 10 nm and two vibration peaks of the diaphragms having the top electrode were found to be useful for the high resolution measurement.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115610916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of Ga-Sn-O films fabricated using mist chemical vapor deposition 雾化学气相沉积法制备Ga-Sn-O薄膜的评价
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521684
Hiroki Fukushima, Masahiro Yuge, T. Matsuda, M. Kimura
{"title":"Evaluation of Ga-Sn-O films fabricated using mist chemical vapor deposition","authors":"Hiroki Fukushima, Masahiro Yuge, T. Matsuda, M. Kimura","doi":"10.1109/IMFEDK.2016.7521684","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521684","url":null,"abstract":"We have evaluated Ga-Sn-O (GTO) films fabricated using mist chemical vapor deposition (CVD). First, it is found that the GTO films are roughly transparent. Moreover, as the deposition temperature decreases, the transmittance becomes higher. Next, it is found that even if the carrier gas speed changes, the sheet resistance is roughly the same. However, as the composition ratio in the material solution changes, the resistance also changes. The sheet resistance is lower for Ga : Sn = 1 : 2. Finally, at least one example, the measured value does not match the expectancy. As a result, we have to conclude that the electrical qualities of the GTO films are quite different for the different film thickness.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124966919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical characteristics of Al foil/Si junctions by surface activated bonding method 表面活化键合法制备铝/硅结的电特性
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-02-08 DOI: 10.1109/IMFEDK.2016.7521694
K. Furuna, J. Liang, N. Shigekawa, M. Matsubara, M. Dhamrin, Y. Nishio
{"title":"Electrical characteristics of Al foil/Si junctions by surface activated bonding method","authors":"K. Furuna, J. Liang, N. Shigekawa, M. Matsubara, M. Dhamrin, Y. Nishio","doi":"10.1109/IMFEDK.2016.7521694","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521694","url":null,"abstract":"We successfully fabricated Al-foil/p-Si junctions by surface activated bonding (SAB). We found that the junctions revealed Schottky properties by measuring their current-voltage characteristics. We also found that the reverse-bias current of the junctions was decreased, i.e., their electrical characteristics were improved by annealing at temperatures below 200 °C. These results demonstrate that the bonding of metal foils should be useful for fabricating several-ten-μm-thick electrodes.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122705826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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