表面活化键合法制备铝/硅结的电特性

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-02-08 DOI:10.1109/IMFEDK.2016.7521694

K. Furuna, J. Liang, N. Shigekawa, M. Matsubara, M. Dhamrin, Y. Nishio

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引用次数: 0

摘要

我们成功地利用表面活化键合(SAB)制备了Al-foil/p-Si结。我们通过测量结的电流-电压特性发现结具有肖特基性质。我们还发现，在低于200°C的温度下退火后，结的反向偏置电流减小，即其电学特性得到改善。这些结果表明，金属箔的键合对于制造几十μm厚的电极是有用的。

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Electrical characteristics of Al foil/Si junctions by surface activated bonding method

We successfully fabricated Al-foil/p-Si junctions by surface activated bonding (SAB). We found that the junctions revealed Schottky properties by measuring their current-voltage characteristics. We also found that the reverse-bias current of the junctions was decreased, i.e., their electrical characteristics were improved by annealing at temperatures below 200 °C. These results demonstrate that the bonding of metal foils should be useful for fabricating several-ten-μm-thick electrodes.

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来源期刊

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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