Analysis of the SOG film crack mechanism for TEOS/SOG/TEOS structure

Abstract

In the multilevel interconnection process using the TEOS / SOG/ TEOS films planarization technology, the low refractive index TEOS film and the upper the Metal line layout have much affect the internal SOG film crack. Existence of the large area upper Metal line is indispensable for the occurrence of the SOG film crack, because it has residual high tensile stress. Furthermore, when the refractive index of the upper layer TEOS film which interfaced with the upper Metal line is decrease, the compression stress is also decrease. It is thought that these complex factors induce the SOG film crack and the TEOS film itself crack.