空气暴露对溅射沉积未掺杂ZnO薄膜物理性能的影响

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI:10.1109/IMFEDK.2016.7521679

N. Takahashi, J. Zhang, Y. Omura, T. Saitoh

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引用次数: 2

摘要

本文演示了未掺杂ZnO薄膜暴露在空气中的影响。在O2环境下退火的ZnO薄膜的横向电阻随着时间的增加而增加，在100小时后减小，而在N2环境下退火的ZnO薄膜的横向电阻对这种暴露几乎不敏感。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of air exposure on physical properties of sputter-deposited undoped ZnO films

This paper demonstrates the impact of exposing undoped ZnO films to the air. Lateral resistance of ZnO films annealed in O2 ambient increases with the time spent and then decreases at over one hundreds hours, while that of ZnO films annealed in N2 ambient is almost insensitive to such exposure.

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来源期刊

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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