用于物联网传感器的高功率高效和可扩展噪声整形SAR ADC

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI:10.1109/IMFEDK.2016.7521664

Y. Tsukamoto, Koji Obata, Kazuo Matsukawa, K. Sushihara

{"title":"用于物联网传感器的高功率高效和可扩展噪声整形SAR ADC","authors":"Y. Tsukamoto, Koji Obata, Kazuo Matsukawa, K. Sushihara","doi":"10.1109/IMFEDK.2016.7521664","DOIUrl":null,"url":null,"abstract":"A high power efficient and scalable noise-shaping SAR ADC was fabricated in 28 nm CMOS process. By integrating residue of 12 bit SAR AD conversion with 3rd order integrator, Σ modulation is achieved and noise floor of AD conversion is shaped. 97.99 dB SNDR and 111.8 dB SFDR for 2 kHz bandwidth with only 37.1 μW power consumption is measured. By increasing sampling frequency, the performance of the ADC is changed to 93.95 dB SNDR and 108.0 SFDR for 20 kHz bandwidth with 493.1 μW power consumption.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"High power efficient and scalable noise-shaping SAR ADC for IoT sensors\",\"authors\":\"Y. Tsukamoto, Koji Obata, Kazuo Matsukawa, K. Sushihara\",\"doi\":\"10.1109/IMFEDK.2016.7521664\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high power efficient and scalable noise-shaping SAR ADC was fabricated in 28 nm CMOS process. By integrating residue of 12 bit SAR AD conversion with 3rd order integrator, Σ modulation is achieved and noise floor of AD conversion is shaped. 97.99 dB SNDR and 111.8 dB SFDR for 2 kHz bandwidth with only 37.1 μW power consumption is measured. By increasing sampling frequency, the performance of the ADC is changed to 93.95 dB SNDR and 108.0 SFDR for 20 kHz bandwidth with 493.1 μW power consumption.\",\"PeriodicalId\":293371,\"journal\":{\"name\":\"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2016.7521664\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2016.7521664","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

采用28nm CMOS工艺制备了一种高效、可扩展的噪声整形SAR ADC。利用3阶积分器对12位SAR AD转换的残差进行积分，实现Σ调制，形成AD转换的本底噪声。在2khz带宽下，测得SNDR为97.99 dB, SFDR为111.8 dB，功耗仅为37.1 μW。通过提高采样频率，在20khz带宽下，ADC的SNDR为93.95 dB, SFDR为108.0，功耗为493.1 μW。

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High power efficient and scalable noise-shaping SAR ADC for IoT sensors

A high power efficient and scalable noise-shaping SAR ADC was fabricated in 28 nm CMOS process. By integrating residue of 12 bit SAR AD conversion with 3rd order integrator, Σ modulation is achieved and noise floor of AD conversion is shaped. 97.99 dB SNDR and 111.8 dB SFDR for 2 kHz bandwidth with only 37.1 μW power consumption is measured. By increasing sampling frequency, the performance of the ADC is changed to 93.95 dB SNDR and 108.0 SFDR for 20 kHz bandwidth with 493.1 μW power consumption.

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来源期刊

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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