分子束外延生长单晶三氧化钨薄膜的电致变色特性

T. Murayama, Wataru Kuwagata, K. Koike, Y. Harada, S. Sasa, M. Yano, Shintaro Kobayashi, K. Inaba
{"title":"分子束外延生长单晶三氧化钨薄膜的电致变色特性","authors":"T. Murayama, Wataru Kuwagata, K. Koike, Y. Harada, S. Sasa, M. Yano, Shintaro Kobayashi, K. Inaba","doi":"10.1109/IMFEDK.2016.7521686","DOIUrl":null,"url":null,"abstract":"C-axis oriented single-crystalline monoclinic WO3 films were grown by molecular beam epitaxy, and studied their properties by fabricating solution-gate electrochromic devices in H2SO4 aqueous solution. These devices exhibited reversible change in the following three states; a colored state with low electrical resistivity after biasing a positive gate voltage, a transparent state with low electrical resistivity after biasing a negative gate voltage, and another transparent state with high electrical resistivity after thermal annealing. At the former two states, the c-axis length of the monoclinic WO3 films was found to expand slightly compared with that of the latter state after annealing. These results were consistently explained in terms of the protonation and hydration of WO3.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrochromic properties of single-crystalline tungsten trioxide films grown by molecular beam epitaxy\",\"authors\":\"T. Murayama, Wataru Kuwagata, K. Koike, Y. Harada, S. Sasa, M. Yano, Shintaro Kobayashi, K. Inaba\",\"doi\":\"10.1109/IMFEDK.2016.7521686\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"C-axis oriented single-crystalline monoclinic WO3 films were grown by molecular beam epitaxy, and studied their properties by fabricating solution-gate electrochromic devices in H2SO4 aqueous solution. These devices exhibited reversible change in the following three states; a colored state with low electrical resistivity after biasing a positive gate voltage, a transparent state with low electrical resistivity after biasing a negative gate voltage, and another transparent state with high electrical resistivity after thermal annealing. At the former two states, the c-axis length of the monoclinic WO3 films was found to expand slightly compared with that of the latter state after annealing. These results were consistently explained in terms of the protonation and hydration of WO3.\",\"PeriodicalId\":293371,\"journal\":{\"name\":\"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2016.7521686\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2016.7521686","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

采用分子束外延法生长了c轴取向单晶单斜WO3薄膜,并在H2SO4水溶液中制备了溶液栅电致变色器件,研究了其性能。这些器件表现出以下三种状态的可逆变化;一种是偏置正栅极电压后电阻率低的有色状态,一种是偏置负栅极电压后电阻率低的透明状态,一种是退火后电阻率高的透明状态。在前两种状态下,单斜WO3薄膜的c轴长度比后一种状态下的稍微扩大。这些结果在WO3的质子化和水化方面得到了一致的解释。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrochromic properties of single-crystalline tungsten trioxide films grown by molecular beam epitaxy
C-axis oriented single-crystalline monoclinic WO3 films were grown by molecular beam epitaxy, and studied their properties by fabricating solution-gate electrochromic devices in H2SO4 aqueous solution. These devices exhibited reversible change in the following three states; a colored state with low electrical resistivity after biasing a positive gate voltage, a transparent state with low electrical resistivity after biasing a negative gate voltage, and another transparent state with high electrical resistivity after thermal annealing. At the former two states, the c-axis length of the monoclinic WO3 films was found to expand slightly compared with that of the latter state after annealing. These results were consistently explained in terms of the protonation and hydration of WO3.
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