基于漂移-扩散模型的超高速图像传感器分析

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI:10.1109/IMFEDK.2016.7521668

L. T. Yen, N. Minamitani, Y. Kamakura, T. Etoh

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引用次数: 0

摘要

基于漂移扩散和光吸收耦合模型，分析了背照式原位存储图像传感器(BSI ISIS)中的电子走时分布。讨论了这种变化对各种器件设计参数和物理条件的依赖性。结果表明，最终最高帧速率与光吸收系数有关。

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Analysis of ultra-high-speed image sensor based on drift-diffusion model

Electron travel time distribution in the backside illuminated in-situ storage image sensor (BSI ISIS) is analyzed based on the drift diffusion model coupled with the light-absorption model. Dependence of the variation on the various device design parameters and physical conditions is discussed. It is shown that the ultimate highest frame rate is dependent on the light absorption coefficient.

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来源期刊

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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